STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET™ II POWER MOSFET PRELIMINARY DATA ■ ■ ■ TYPE VDSS RDS(on) ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ DC MOTOR DRIVE ■ DC-DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ■ CELLULAR SOT23-6L INTERNAL SCHEMATIC DIAGRAM MARKING ■ STP6 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Unit 60 V 60 V ± 15 V A ID Drain Current (continuous) at TC = 25°C 2 ID Drain Current (continuous) at TC = 100°C 1.3 A 8 A 1.6 W IDM(•) Drain Current (pulsed) Total Dissipation at TC = 25°C Ptot (•) Pulse width limited by safe operating area. May 2002 . Value Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/6 STT2PF60L THERMAL DATA Rthj-amb Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient (**)Thermal Resistance Junction-ambient Max. Operating Junction Temperature Storage Temperature Max Max 78 156 150 -55 to 150 °C/W °C/W °C °C (*) Mounted on a 1 in2 pad of 2 oz Cu in FR-4 board (**) Mounted on a minimum pad of 2 oz Cu in FR-4 board ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 15 V V(BR)DSS Min. Typ. Max. 60 Unit V 1 10 µA µA ±100 nA Max. Unit ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 4.5 V ID = 1 A ID = 1 A Min. Typ. 1 V 0.20 0.24 0.25 0.30 Ω Ω Typ. Max. Unit DYNAMIC Symbol 2/6 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 10 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V f = 1 MHz, VGS = 0 ID =1 A Min. 3 S 313 67 25 pF pF pF STT2PF60L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 1 A VDD = 30 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) 44 34 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 30 V ID= 2A VGS=5V (see test circuit, Figure 2) 5 0.5 2.2 7 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 1 A VDD = 30 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) 42 15 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions ISD = 2 A Min. Typ. VGS = 0 di/dt = 100A/µs ISD = 2 A VDD = 30 V Tj = 150°C (see test circuit, Figure 3) 38 47.5 2.5 Max. Unit 2 8 A A 1.2 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. 3/6 STT2PF60L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 4/6 Fig. 2: Gate Charge test Circuit STT2PF60L SOT23-6L MECHANICAL DATA mm DIM. MIN. mils TYP. MAX. MIN. TYP. MAX. A 0.90 1.45 0.035 0.057 A1 0.00 0.15 0.000 0.006 A2 0.90 1.30 0.035 0.051 b 0.25 0.50 0.010 0.020 C 0.09 0.20 0.004 0.008 D 2.80 3.10 0.110 0.122 E 2.60 3.00 0.102 0.118 E1 1.50 1.75 0.059 0.069 L 0.35 0.55 0.014 0.022 e 0.95 0.037 e1 1.90 0.075 A A2 e A1 b L c E e1 D E1 5/6 STT2PF60L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6