STMICROELECTRONICS STS4DPF30L

STS4DPF30L
DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8
STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE
STS4DPF30L
■
■
■
VDSS
RDS(on)
ID
30 V
<0.08 Ω
4A
TYPICAL RDS(on) = 0.07 Ω
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR
PHONES
■ DC-DC CONVERTER
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
IDM(•)
Ptot
Parameter
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Value
Unit
30
V
30
V
Gate- source Voltage
± 16
V
Drain Current (continuous) at TC = 25°C Single Operation
Drain Current (continuous) at TC = 100°C Single Operation
4
2.5
A
A
Drain Current (pulsed)
16
A
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
2.0
1.6
W
W
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
April 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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STS4DPF30L
THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Single Operation
Dual Operating
78
62.5
-55 to150
-55 to 150
Thermal Operating Junction-ambient
Storage Temperature
(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t
[
°C/W
°C/W
°C
°C
10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
V(BR)DSS
Min.
Typ.
Max.
30
Unit
V
1
10
µA
µA
±100
nA
Max.
Unit
ON (*)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V
VGS = 4.5 V
ID = 250 µA
Min.
Typ.
1
ID = 2 A
ID = 2 A
V
0.070
0.085
0.08
0.10
Ω
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
2/6
Parameter
Test Conditions
gfs (*)
Forward Transconductance
VDS= 15V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
ID = 2 A
Min.
10
S
1350
490
130
pF
pF
pF
STS4DPF30L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
ID = 2 A
VDD = 15 V
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 1)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 24 V ID= 4 A VGS= 5 V
Min.
Typ.
Max.
25
35
(See test circuit, Figure 2)
Unit
ns
ns
12.5
5
3
16
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
Min.
ID = 2 A
VDD = 15 V
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 1)
125
35
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*)
Forward On Voltage
ISD = 4 A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100A/µs
ISD = 4 A
VDD = 15 V
Tj = 150°C
(See test circuit, Figure 3)
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
VGS = 0
45
36
1.6
Max.
Unit
4
16
A
A
1.2
V
ns
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
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STS4DPF30L
Fig. 1: Switching Times Test Circuits For Resistive
Load
Fig. 3: Test Circuit For Diode Recovery Behaviour
4/6
Fig. 2: Gate Charge test Circuit
STS4DPF30L
SO-8 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
MAX.
MIN.
TYP.
1.75
0.1
0.003
0.009
1.65
0.65
MAX.
0.068
0.25
a2
a3
inch
0.064
0.85
0.025
0.033
b
0.35
0.48
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.25
0.5
0.010
0.019
c1
45 (typ.)
D
4.8
5.0
0.188
0.196
E
5.8
6.2
0.228
0.244
e
1.27
0.050
e3
3.81
0.150
F
3.8
4.0
0.14
0.157
L
0.4
1.27
0.015
0.050
M
S
0.6
0.023
8 (max.)
0016023
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STS4DPF30L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 2002 STMicroelectronics - All Rights Reserved
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