STW200NF03 N-CHANNEL 30V - 0.002 Ω - 120A TO-247 ULTRA LOW ON-RESISTANCE STripFET™ II MOSFET TYPE STW200NF03 ■ ■ VDSS RDS(on) ID 30V <0.0028Ω 120A TYPICAL RDS(on) = 0.002 Ω 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is particularly suitable in OR-ing function circuits and synchronous rectification. 1 APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ HIGH CURRENT, HIGH SWITCHING SPEED ■ OR-ING FUNCTION 2 3 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Value Unit Drain-source Voltage (VGS = 0) Parameter 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V VGS Gate- source Voltage ± 20 V ID(•) Drain Current (continuous) at TC = 25°C 120 A ID Drain Current (continuous) at TC = 100°C 120 A IDM(••) Ptot Drain Current (pulsed) 480 A Total Dissipation at TC = 25°C 350 W Derating Factor 2.33 W/°C dv/dt (1) Peak Diode Recovery voltage slope 1.5 V/ns EAS (2) Single Pulse Avalanche Energy 4 J -55 to 175 °C Tstg Tj Storage Temperature Operating Junction Temperature (••) Pulse width limited by safe operating area. (•) Current limited by package October 2002 (1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. (2) Starting T j = 25 oC, ID = 60 A, VDD= 15V 1/8 STW200NF03 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.43 50 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 250 µA Min. Typ. Max. Unit 2 3 4 V 0.002 0.0028 Ω Typ. Max. Unit ID = 60 A DYNAMIC Symbol 2/8 Parameter Test Conditions gfs (*) Forward Transconductance VDS = 15 V Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 ID = 60 A Min. 200 S 10 3.35 385 nF nF pF STW200NF03 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time ID = 60 A VDD = 15 V RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 50 300 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=15V ID=120A VGS= 10 V 210 63.5 63.5 280 nC nC nC Typ. Max. Unit (see test circuit, Figure 4) ns ns SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. ID = 60 A VDD = 15 V RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 100 80 ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 120 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt = 100A/µs ISD = 120 A VDD = 20 V Tj = 150°C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. VGS = 0 90 250 5.5 Max. Unit 120 480 A A 1.3 V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STW200NF03 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STW200NF03 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature. . . 5/8 STW200NF03 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW200NF03 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 7/8 STW200NF03 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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