MMBF4416 N-Channel RF Amplifiers • This device is designed for RF amplifiers. • Sourced from process 50. G S SOT-23 D Mark: 6A Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Junction and Storage Temperature Range -55 to +150 °C Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1μA IGSS Gate Reverse Current VGS = -20V, VDS = 0 VGS = -20V, VDS = 0, TA = 150°C VGS(off) Gate Source Cut-off Voltage VDS = 15V, ID = 1nA VGS Gate Source Voltage -30 V -1 -200 nA nA -2.5 -6 V VDS = 15V, ID = 0.5mA -1 -5.5 V 5 15 mA 1 V 7500 μmhos On Characteristics IDSS Zero-Gate Voltage Drain Current VGS = 15V, VGS = 0 VGS(f) Gate-Source Forward Voltage VDS = 0, IG = 1mA Small Signal Characteristics lYfsl Forward Transfer Admittance VDS = 15V, VGS = 0, f = 1KHz 4500 lyosl Output Admittance VDS = 15V, VGS = 0, f = 1KHz 50 μmhos Ciss Input Capacitance VDS = 15V, VGS = 0, f = 1MHz 4 PF Crss Reverse Transfer Capacitance VDS = 15V, VGS = 0, f = 1MHz 0.9 PF Coss Output Capacitance VDS = 15V, VGS = 0, f = 1MHz 2 PF 2 dB Functional Characteristics NF Noise Figure VDS = 15V, ID = 5mA, Rg = 100Ω, f = 100MHz Gps Common Source Power Gain VDS = 15V, ID = 5mA, Rg = 100Ω, f = 100MHz © 2009 Fairchild Semiconductor Corporation MMBF4416 Rev. B2 18 dB www.fairchildsemi.com 1 MMBF4416 — N-Channel RF Amplifiers April 2009 A Symbol Parameter Max. Units PD Total Device Dissipation Derate above 25°C 225 1.8 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 556 °C/W * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. © 2009 Fairchild Semiconductor Corporation MMBF4416 Rev. B2 www.fairchildsemi.com 2 MMBF4416 — N-Channel RF Amplifiers Thermal Characteristics T =25°C unless otherwise noted MMBF4416 — N-Channel RF Amplifiers Mechanical Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation MMBF4416 Rev. B2 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com