FAIRCHILD MMBF4416_09

MMBF4416
N-Channel RF Amplifiers
• This device is designed for RF amplifiers.
• Sourced from process 50.
G
S
SOT-23
D
Mark: 6A
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
Value
Units
VDG
Drain-Gate Voltage
30
V
VGS
Gate-Source Voltage
-30
V
IGF
Forward Gate Current
10
mA
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristics
V(BR)GSS
Gate-Source Breakdown Voltage
VDS = 0, IG = 1μA
IGSS
Gate Reverse Current
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0, TA = 150°C
VGS(off)
Gate Source Cut-off Voltage
VDS = 15V, ID = 1nA
VGS
Gate Source Voltage
-30
V
-1
-200
nA
nA
-2.5
-6
V
VDS = 15V, ID = 0.5mA
-1
-5.5
V
5
15
mA
1
V
7500
μmhos
On Characteristics
IDSS
Zero-Gate Voltage Drain Current
VGS = 15V, VGS = 0
VGS(f)
Gate-Source Forward Voltage
VDS = 0, IG = 1mA
Small Signal Characteristics
lYfsl
Forward Transfer Admittance
VDS = 15V, VGS = 0, f = 1KHz
4500
lyosl
Output Admittance
VDS = 15V, VGS = 0, f = 1KHz
50
μmhos
Ciss
Input Capacitance
VDS = 15V, VGS = 0, f = 1MHz
4
PF
Crss
Reverse Transfer Capacitance
VDS = 15V, VGS = 0, f = 1MHz
0.9
PF
Coss
Output Capacitance
VDS = 15V, VGS = 0, f = 1MHz
2
PF
2
dB
Functional Characteristics
NF
Noise Figure
VDS = 15V, ID = 5mA, Rg = 100Ω, f = 100MHz
Gps
Common Source Power Gain
VDS = 15V, ID = 5mA, Rg = 100Ω, f = 100MHz
© 2009 Fairchild Semiconductor Corporation
MMBF4416 Rev. B2
18
dB
www.fairchildsemi.com
1
MMBF4416 — N-Channel RF Amplifiers
April 2009
A
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25°C
225
1.8
mW
mW/°C
RθJA
Thermal Resistance, Junction to Ambient
556
°C/W
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
© 2009 Fairchild Semiconductor Corporation
MMBF4416 Rev. B2
www.fairchildsemi.com
2
MMBF4416 — N-Channel RF Amplifiers
Thermal Characteristics T =25°C unless otherwise noted
MMBF4416 — N-Channel RF Amplifiers
Mechanical Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
MMBF4416 Rev. B2
www.fairchildsemi.com
3
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com