MMBF4416A N-Channel RF Amplifier Features • This device is designed for RF amplifiers. G • Sourced from process 50. S SOT-23 D Mark: 6BG Ordering Information Part Number Top Mark Package Packing Method MMBF4416A 6BG SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Unit VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 10 mA -55 to 150 °C TJ, TSTG Parameter Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 2005 Fairchild Semiconductor Corporation MMBF4416A Rev. 1.3 www.fairchildsemi.com MMBF4416A — N-Channel RF Amplifier June 2015 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Max. Unit Total Device Dissipation 225 mW Derate Above 25°C 1.8 mW/°C Thermal Resistance, Junction-to-Ambient 556 °C/W Note: 3. Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) VGS Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 μA Gate Reverse Current VGS = -20 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 nA Gate-Source Voltage VDS = 15 V, ID = 500 μA -35 V -100 pA -2.5 -6.0 V -1.0 -5.5 V 5 15 mA 1 V 7500 μmhos On Characteristics IDSS VGS(f) Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 Gate-Source Forward Voltage VDS = 0, IG = 1.0 mA Small Signal Characteristics gfs Forward Transfer Conductance(4) VDS = 15 V, VGS = 0, f = 1.0 kHz (4) 4500 gos Output Conductance VDS = 15 V, VGS = 0, f = 1.0 kHz 50 μmhos Ciss Input Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 4.0 pF Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 0.8 pF Coss Output Capacitance VDS = 15 V, VGS = 0, f = 1.0 MHz 2.0 pF Noise Figure VDS = 15 V, VGS = 0, ID = 5 mA, Rg = 1 kΩ, f = 400 MHz 4.0 dB NF Note: 4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2% © 2005 Fairchild Semiconductor Corporation MMBF4416A Rev. 1.3 www.fairchildsemi.com 2 MMBF4416A — N-Channel RF Amplifier Thermal Characteristics(3) MMBF4416A — N-Channel RF Amplifier Physical Dimensions 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 1. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2005 Fairchild Semiconductor Corporation MMBF4416A Rev. 1.3 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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