FAIRCHILD D44C8_10

D44C8
NPN Power Amplifier
• Sourced from process 4P.
TO-220
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings
Symbol
VCEO
IC
TJ, TSTG
TA=25°C unless otherwise noted
Value
Units
Collector-Emitter Voltage
Parameter
60
V
Collector Current
4.0
A
-55 to +150
°C
- Continuous
Operating and Storage Junction Temperature Range
Electrical Characteristics
Symbol
TA=25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 100mA, IB = 0
60
V
ICES
Collector-Emitter-(Base)Short
VCE = 70V, IE = 0
10
μA
IEBO
Emitter-Cutoff Current
VEB = 5.0V, IB = 0
100
μA
On Characteristics
DC Current Gain
VCE = 1.0V, IC = 0.2A
VCE = 1.0V, IC = 2.0A
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 1.0A, IB = 50mA
0.5
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = 1.0A, IB = 100mA
1.3
V
Output Capacitance
VCB = 10V, f = 1.0MHz
100
pF
Current Gain Bandwidth Product
IC = 20mA, VCE = 4.0V
40
MHz
hFE
40
20
120
Small Signal Characteristics
Cob
fT
tON
td, Delay Time
tr , Rise Time
tOFF
ts , Storage Time
tf , Fall Time
Thermal Characteristics
IC = 1.0A,
IB1 = IB2 = 0.1A,
VCC = 30V, tp = 25μs
54
490
ns
636
59
ns
TA=25°C unless otherwise noted
Symbol
Max.
Units
Total Device Dissipation
Derate above 25°C
60
480
W
mW/°C
RθJC
Thermal Resistance, Junction to Case
2.1
°C/W
RθJA
Thermal Resistance, Junction to Ambient
62.5
°C/W
PD
Parameter
© 2009 Fairchild Semiconductor Corporation
D44C8 Rev. B2
www.fairchildsemi.com
1
D44C8 — NPN Power Amplifier
January 2010
D44C8 — NPN Power Amplifier
Typical Performance Characteristics
© 2009 Fairchild Semiconductor Corporation
D44C8 Rev. B2
www.fairchildsemi.com
2
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AccuPower¥
Auto-SPM¥
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CTL™
Current Transfer Logic™
EcoSPARK®
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™*
®
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®
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®
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™
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®
*
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com