SD1534-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . .. .. .. . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 80 WATTS (typ.) IFF 1030 - 1090 MHz 75 WATTS (min.) DME 1025 - 1150 MHz 50 WATTS (typ.) TACAN 960 - 1215 MHz 8.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .250 SQ. 2LFL (M105) hermetically sealed ORDER CODE SD1534-08 BRANDING 1534-8 PIN CONNECTION DESCRIPTION The SD1534-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1534-08 is packaged in the .280” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. 1. Collector 2. Base 3. Emitter ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V Device Current 5.5 A Power Dissipation 218.7 W TJ Junction Temperature +200 °C T STG Storage Temperature − 65 to +150 °C 0.8 °C/W IC PDISS THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 1/3 SD1534-08 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Value Test Conditions Min. Typ. Max. Unit BVCBO IC = 10mA IE = 0mA 65 — — V BVCES IC = 25mA VBE = 0V 65 — — V BVEBO IE = 10mA IC = 0mA 3.5 — — V ICES VCE = 50V IE = 0mA — — 5 mA hFE VCE = 5V IC = 100mA 10 — 200 — DYNAMIC Symbol Min. Typ. Max. Unit POUT f = 1025 — 1150MHz PIN = 13.5 W VCE = 50 V 75 — — W GP f = 1025 — 1150MHz PIN = 13.5 W VCE = 50 V 7.5 — — dB Note: 2/3 Value Test Conditions Pulse W idth = 10µ Sec, Duty Cycle = 1% This device i s sui table f or use under other pulse widt h/duty cycle condit ions. Please contact the fact ory for specific appli cat ions assi stance. SD1534-08 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0105 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 3/3