FDG410NZ Single N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package. Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 kV (Note 3) Applications High performance trench technology for extremely low rDS(on) DC/DC converter High power and current handling capability Power management Fast switching speed Load switch Low gate charge RoHS Compliant S D D D 1 6 D D 2 5 D G 3 4 S G D D SC70-6 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V ±8 V 2.2 6.0 Power Dissipation TA = 25 °C (Note 1a) 0.42 Power Dissipation TA = 25 °C (Note 1b) 0.38 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 300 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 333 °C/W Package Marking and Ordering Information Device Marking .41 Device FDG410NZ ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B Package SC70-6 1 Reel Size 7” Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDG410NZ Single N-Channel PowerTrench® MOSFET March 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 µA 1.0 V 20 V 17 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 0.4 0.7 -3 mV/°C VGS = 4.5 V, ID = 2.2 A 50 70 VGS = 2.5 V, ID = 2.0 A 56 77 VGS = 1.8 V, ID = 1.8 A 67 87 VGS = 1.5 V, ID = 1.5 A 83 115 VGS = 4.5 V, ID = 2.2 A, TJ = 125 °C 71 100 VDD = 5 V, ID = 2.2 A 11 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10 V, VGS = 0 V, f = 1 MHz 400 535 pF 70 95 pF 45 70 pF Ω 2.8 Switching Characteristics td(on) Turn-On Delay Time 5.3 11 tr Rise Time 2.3 10 ns td(off) Turn-Off Delay Time 18 33 ns tf Fall Time 2.3 10 ns Qg Total Gate Charge 5.1 7.2 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 10 V, ID = 2.2 A, VGS = 4.5 V, RGEN = 6 Ω VGS = 4.5 V, VDD = 10 V, ID = 2.2 A ns 0.6 nC 1.0 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 0.35 A 0.35 (Note 2) IF = 2.2 A, di/dt = 100 A/µs A 0.6 1.2 V 11 20 ns 2.5 10 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. a. 300 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 333 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B 2 www.fairchildsemi.com FDG410NZ Single N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 6 VGS = 2.5 V 5 ID, DRAIN CURRENT (A) 2.5 VGS = 3.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5 V VGS = 1.8 V VGS = 1.5 V 4 3 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 2 1 0 0 0.2 0.4 0.6 0.8 VGS = 1.5 V 2.0 VGS = 1.8 V 1.5 VGS = 3.5 V 1.0 0.5 1.0 1 2 5 6 180 rDS(on), DRAIN TO ID = 2.2 A VGS = 4.5 V 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 160 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 140 ID = 1.1 A 120 100 TJ = 125 oC 80 TJ = 25 oC 60 40 1.0 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 6 IS, REVERSE DRAIN CURRENT (A) 6 ID, DRAIN CURRENT (A) 3 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 5 VGS = 4.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = 2.5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VDS = 5 V 4 3 2 TJ = 125 oC TJ = 25 oC 1 TJ = -55 oC 0 0.0 0.5 1.0 1.5 1 TJ = 125 oC TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.2 2.0 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDG410NZ Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 5 1000 ID = 2.2 A 4 CAPACITANCE (pF) VDD = 5 V 3 VDD = 10 V VDD = 15 V 2 Ciss 100 Coss Crss 1 f = 1 MHz VGS = 0 V 10 0.1 0 0 1 2 3 4 5 6 1 Figure 7. Gate Charge Characteristics 20 12 14 Figure 8. Capacitance vs Drain to Source Voltage 5 10 Ig, GATE LEAKAGE CURRENT (µA) 10 0.1 ms ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 10 s 1s DC RθJA = 333 oC/W TA = 25 oC 0.01 0.01 0.1 VGS = 0 V 3 10 1 10 10 TJ = 25 oC -1 10 -3 10 -5 10 1 TJ = 125 oC 100 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 100 VGS = 4.5 V SINGLE PULSE RθJA = 333 oC/W 10 TA = 25 oC 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B 4 www.fairchildsemi.com FDG410NZ Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 333 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B 5 www.fairchildsemi.com FDG410NZ Single N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDG410NZ Single N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B 7 www.fairchildsemi.com FDG410NZ Single N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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