FDS89161LZ Dual N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 105 mΩ Features General Description Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level. Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Application CDM ESD protection level > 2KV typical (Note 4) DC-DC conversion 100% UIL Tested RoHS Compliant D2 D2 D1 D1 G2 S2 G1 5 D2 6 D1 7 D1 S1 Pin 1 D2 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Ratings 100 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous 2.7 ID Parameter -Pulsed 15 Single Pulse Avalanche Energy EAS PD TJ, TSTG (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 13 31 (Note1a) Operating and Storage Junction Temperature Range 1.6 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 4.0 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS89161LZ Device FDS89161LZ ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 Package SO-8 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDS89161LZ Dual N-Channel PowerTrench® MOSFET June 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±10 μA 2.2 V 100 V 68 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 2.7 A 81 105 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 2.1 A 110 160 VGS = 10 V, ID = 2.7 A, TJ = 125 °C 140 182 VDS = 10 V, ID = 2.7 A 7.8 gFS Forward Transconductance 1 1.7 -6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 50 V, VGS = 0 V, f = 1MHz 227 302 pF 44 58 pF 3 4 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VGS = 0 V to 5 V VDD = 50 V, ID = 2.7 A, VGS = 10 V, RGEN = 6 Ω Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 50 V, ID = 2.7 A 3.8 10 1.2 10 ns ns 9.5 17 ns 1.6 10 ns 3.8 5.3 nC 2.1 2.9 nC 0.7 nC 0.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.7 A (Note 2) 0.8 1.3 VGS = 0 V, IS = 2 A (Note 2) 0.8 1.2 31 56 ns 20 36 nC IF = 2.7 A, di/dt = 100 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper b) 135°C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C, L = 0.3 mH, IAS =25 A, VDD = 27 V, VGS = 10V. 4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 2 www.fairchildsemi.com FDS89161LZ Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4 VGS = 10 V VGS = 8 V VGS = 6 V 12 VGS =5 V VGS = 4 V 9 6 VGS = 3.5 V 3 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 3.5 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 15 3 VGS = 5 V 2 VGS = 6 V 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 5 0 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 12 15 500 ID = 2.7 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 VGS = 10 V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 400 300 TJ = 125 oC 200 100 TJ = 25 oC IS, REVERSE DRAIN CURRENT (A) VDS = 50 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 TJ = 150 oC 3 TJ = 25 oC 2 TJ = -55 oC 4 6 8 20 10 4 6 8 10 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 0.001 0.0 10 TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 2 Figure 4. On-Resistance vs Gate to Source Voltage 12 9 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS, GATE TO SOURCE VOLTAGE (V) 15 0 ID = 2.7 A 0 0.6 -75 Figure 3. Normalized On-Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 6 VGS = 8 V ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0 VGS = 4 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDS89161LZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted 400 VDD = 25 V ID = 2.7 A Ciss 8 100 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 75 V 4 Coss 10 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 1 Figure 7. Gate Charge Characteristics 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 3.0 2.5 TJ = 25 oC 2.0 TJ = 100 oC 1.5 3 VGS = 10 V 2 VGS = 6 V 1 o RθJA = 78 C/W TJ = 125 oC 1.0 0.01 0.1 1 0 25 2 50 -1 ID, DRAIN CURRENT (A) VDS = 0 V 10 -4 10 TJ = 125 oC -5 10 -6 10 TJ = 25 oC -7 10 100 us 1 0.1 1 ms THIS AREA IS LIMITED BY rDS(on) -8 10 0.01 0.005 0.1 -9 5 150 20 10 -3 0 125 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 10 10 100 o Figure 9. Unclamped Inductive Switching Capability -2 75 TA, Ambient TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Ig, GATE LEAKAGE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 Crss 1 0.1 10 15 20 25 30 35 100 ms SINGLE PULSE TJ = MAX RATED RθJA = 135 oC/W 1s 10 s TA = 25 oC DC 1 10 100 400 VDS, DRAIN to SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 10 ms Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDS89161LZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 1000 100 10 SINGLE PULSE o RθJA = 135 C/W 1 o TA = 25 C 0.5 -4 10 -3 -2 10 -1 10 10 1 2 10 3 10 10 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 5 www.fairchildsemi.com FDS89161LZ Dual N-Channel PowerTrench® MOSFET Typical Characteristics ( N-Channel) TJ = 25°C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54 ©2011 Fairchild Semiconductor Corporation FDS89161LZ Rev. C4 6 www.fairchildsemi.com FDS89161LZ Dual N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Power-SPM™ FPS™ The Power Franchise® Auto-SPM™ PowerTrench® F-PFS™ The Right Technology for Your Success™ ® AX-CAP™* FRFET® PowerXS™ ® SM BitSiC Global Power Resource Programmable Active Droop™ Build it Now™ Green FPS™ QFET® TinyBoost™ Green FPS™ e-Series™ QS™ CorePLUS™ TinyBuck™ Gmax™ Quiet Series™ CorePOWER™ TinyCalc™ GTO™ RapidConfigure™ CROSSVOLT™ TinyLogic® ™ IntelliMAX™ CTL™ TINYOPTO™ ISOPLANAR™ Current Transfer Logic™ TinyPower™ Saving our world, 1mW/W/kW at a time™ MegaBuck™ DEUXPEED® TinyPWM™ SignalWise™ MICROCOUPLER™ Dual Cool™ TinyWire™ SmartMax™ MicroFET™ EcoSPARK® TranSiC® SMART START™ MicroPak™ EfficentMax™ TriFault Detect™ ® SPM MicroPak2™ ESBC™ TRUECURRENT®* MillerDrive™ STEALTH™ ® μSerDes™ ® MotionMax™ SuperFET Motion-SPM™ SuperSOT™-3 Fairchild® ® mWSaver™ SuperSOT™-6 Fairchild Semiconductor UHC® OptiHiT™ SuperSOT™-8 FACT Quiet Series™ ® ® Ultra FRFET™ ® OPTOLOGIC SupreMOS FACT UniFET™ OPTOPLANAR® SyncFET™ FAST® ® VCX™ Sync-Lock™ FastvCore™ VisualMax™ ®* FETBench™ XS™ FlashWriter® * PDP SPM™ Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Fairchild Semiconductor: FDS89161LZ