STPS1L30A/U ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 1A VRRM 30 V Tj (max) 150 °C VF (max) 0.3 V FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST YIELD IN THE APPLICATIONS SURFACE MOUNT MINIATURE PACKAGE SMA STPS1L30A JEDEC DO-214AC SMB STPS1L30U JEDEC DO-214AA DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters, freewheel diode and integrated circuit latch up protection. Packaged in SMA and SMB, this device is especially intended for use in parallel with MOSFETs in synchronous rectification. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 30 V IF(RMS) RMS forward current 10 A TL = 135°C δ = 0.5 1 A IF(AV) Average forward current IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A IRRM Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A IRSM Non repetitive peak reverse current tp = 100 µs square 1 A Tstg Storage temperature range - 65 to + 150 °C 150 °C 10000 V/µs Tj dV/dt * : Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j−a) dTj August 1999 - Ed: 4A 1/5 STPS1L30A/U THERMAL RESISTANCES Symbol Parameter Rth (j-l) Junction to lead Value Unit SMA 30 °C/W SMB 25 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameters Tests Conditions IR * Reverse leakage Current Tj = 25°C Min. Typ. Forward Voltage drop Tj = 25°C 200 µA 15 mA 0.395 V 6 IF = 1 A Tj = 125°C Tj = 25°C Unit VR = VRRM Tj = 100°C VF * Max. 0.26 IF = 2 A 0.3 0.445 Tj = 125°C 0.325 0.375 * tp = 380 µs, δ < 2% Pulse test : To evaluate the maximum conduction losses use the following equation : P = 0.225 x IF(AV) + 0.075 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. Fig. 2: Average forward current versus ambient temperature (δ=0.5). PF(av)(W) 1.2 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 δ = 0.1 δ = 0.2 IF(av)(A) Rth(j-a)=Rth(j-l) δ = 0.5 1.0 δ = 0.05 Rth(j-a)=120°C/W 0.8 Rth(j-a)=100°C/W 0.6 δ=1 0.4 T T 0.2 IF(av) (A) 0.2 0.4 0.6 δ=tp/T 0.8 tp 1.0 0.0 1.2 Fig. 3-1: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA). δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 Fig. 3-2: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB). IM(A) IM(A) 10 10 8 8 Ta=25°C 6 Ta=25°C 6 4 Ta=50°C 4 Ta=50°C 2 Ta=100°C IM 2/5 1E-2 IM t t(s) t δ=0.5 0 1E-3 Ta=100°C 2 t(s) δ=0.5 1E-1 1E+0 0 1E-3 1E-2 1E-1 1E+0 STPS1L30A/U Fig. 4-1: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMB). Fig. 4-2: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35µm, recommended pad layout) (SMA). Zth(j-a)/Rth(j-a) Zth(j-a)/Rth(j-a) 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 T T 0.2 0.2 δ=tp/T tp(s) 0.0 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). 1E+2 δ=tp/T tp(s) tp 0.0 1E-2 1E-1 1E+0 1E+1 tp 1E+2 5E+2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 500 Tj=150°C 1E+1 F=1MHz Tj=25°C Tj=125°C Tj=100°C 1E+0 100 1E-1 Tj=25°C 1E-2 VR(V) 1E-3 0 5 10 15 VR(V) 20 25 30 Fig. 7-1: Forward voltage drop versus forward current (typical values, high level). 10 3.0 2.5 Tj=100°C 2.0 Tj=150°C Tj=25°C 1.00 2 5 10 20 30 Fig. 7-2: Forward voltage drop versus forward current (maximum values, low level). IFM(A) 10.00 1 IFM(A) Tj=125°C Typical values Tj=150°C Tj=100°C 1.5 Tj=25°C 1.0 0.5 VFM(V) 0.10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VFM(V) 0.0 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 3/5 STPS1L30A/U Fig. 8-1: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB). Fig. 8-2: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA). Rth(j-a) (°C/W) Rth(j-a) (°C/W) 120 140 100 120 100 80 80 60 60 40 40 20 20 S(Cu) (cm²) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 S(Cu) (cm²) 0 1 2 3 4 PACKAGE MECHANICAL DATA SMA DIMENSIONS REF. Millimeters Inches E1 Min. Max. Min. Max. A1 1.90 2.70 0.075 0.106 A2 0.05 0.20 0.002 0.008 b 1.25 1.65 0.049 0.065 c 0.15 0.41 0.006 0.016 E 4.80 5.60 0.189 0.220 E1 3.95 4.60 0.156 0.181 D 2.25 2.95 0.089 0.116 L 0.75 1.60 0.030 0.063 D E A1 A2 C L b FOOT PRINT DIMENSIONS (in millimeters) 1.65 1.45 4/5 2.40 1.45 5 STPS1L30A/U PACKAGE MECHANICAL DATA SMB DIMENSIONS REF. E1 D E Millimeters Inches Min. Max. Min. Max. A1 1.90 2.45 0.075 0.096 A2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.159 0.181 D 3.30 3.95 0.130 0.156 L 0.75 1.60 0.030 0.063 A1 A2 C L b FOOT PRINT DIMENSIONS (in millimeters) 2.3 1.52 2.75 1.52 Ordering type Marking Package Weight Base qty Delivery mode STPS1L30U G23 SMB 0.107g 2500 Tape & reel STPS1L30A GB3 SMA 0.068g 5000 Tape & reel Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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