T1235-600G HIGH PERFORMANCE TRIAC FEATURES HIGH COMMUTATION (dI/dt)c > 6.5 A/ms without snubber HIGH STATIC dV/dt > 500 V/µs A2 DESCRIPTION A2 The T1235-600G triac uses a high performance SNUBBERLESSTM technology. The part is intended for general purpose applications using surface mount technology. G A1 D2PAK ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 600 V IT(RMS) RMS on-state current (360° conduction angle) Tc= 105°C 12 A Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 126 A tp = 10 ms 120 I t Value (half-cycle, 50 Hz) tp = 10 ms 72 A2s Critical rate of rise of on-state current Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 ITSM 2 I t dI/dt 2 IG = 500 mA Tstg Tj Tl dIG /dt = 1 A/µs. Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10s January 1998 - Ed: 1D - 40, + 150 - 40, + 125 °C 260 °C 1/5 T1235-600G THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) Junction to ambiant (S=1cm2) 45 °C/W Rth(j-c) Junction to case for DC 1.8 °C/W Rth(j-c) Junction to case for AC 360°conduction angle (F=50Hz) 1.4 °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions Quadrant VD=12V (DC) RL=33Ω Tj= 25°C I-II-III Sensitivity Unit MIN 2 mA MAX 35 VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.3 V VGD VD=VDRM RL=3.3kΩ Tj= 125°C I-II-III MIN 0.2 V IH * IT= 100mA Tj= 25°C MAX 35 mA IL IG = 1.2 IGT I-III MAX 50 mA II MAX 80 Gate open Tj = 25°C VTM * ITM= 17A tp= 380µs Tj= 25°C MAX 1.5 V IDRM VD = VDRM Tj= 25°C MAX 5 µA IRRM VR = VRRM Tj= 125°C MAX 2 mA Linear slope up to VD=67%VDRM Gate open Tj= 125°C MIN 500 V/µs Without snubber Tj= 125°C MIN 6.5 A/ms dV/dt * (dI/dt)c * * For either polarity of electrode A2 voltage with reference to electrode A1. ORDERING INFORMATION Add ”-TR” suffix for Tape & Reel shipment T 12 35 - 600 PACKAGE : G = D2PAK TRIAC CURRENT G SENSITIVITY 2/5 VOLTAGE T1235-600G Fig. 1: Maximum power dissipation versus RMS on-state current. Fig. 2: Correlation between maximum power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink+contact. P(W) P(W) 16 16 α=180° 14 12 Rth=2°C/W Rth=0°C/W 105 12 110 10 α=90° 8 8 115 α=60° 6 4 6 4 α=30° 2 0 Rth=4°C/W Rth=6°C/W 14 α=120° 10 Tcase (°C) IT(RMS)(A) 0 0 2 4 6 120 α=180° 2 8 10 12 Tamb(°C) 125 0 20 40 60 80 100 120 140 Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(RMS)(A) K=[Zth/Rth] 1.00 14 α=180° 12 Zth(j-c) 10 Zth(j-a) 8 0.10 6 4 2 0 Tcase( °C) 0 25 50 tp(s) 75 100 125 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature (typical values). Fig. 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH[Tj]/IGT,IH[Tj=25°C] ITSM(A) 2.5 120 2.0 Tj initial=25°C F=50Hz 100 IGT 80 1.5 60 1.0 IH 40 0.5 20 Number of cycles Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 3/5 T1235-600G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-state characteristics(maximum values). ITSM(A),I t(A s) ITM(A) 500 100 Tj max.: Tj initial=25°C ITSM Vto=0.77V Rt=42 m Ω Tj=Tj max. 100 It 10 Tj=25°C VTM (V) tp(ms) 10 1 2 5 10 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35µm). 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. Rth(j-a) (°C/W) T (°C) 80 250 245°C 70 215°C 200 60 50 Epoxy FR4 board 150 40 100 30 20 10 0 Metal-backed board 50 S(Cu) (cm ) t (s) 0 0 4 8 12 16 20 24 28 32 36 40 4/5 0 40 80 120 160 200 240 280 320 360 T1235-600G PACKAGE MECHANICAL DATA D2PAK DIMENSIONS REF. A E C2 L2 D L L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 Note 1: Max resin gate protusion = 0.5 mm Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 B 0.03 0.70 0.23 0.001 0.93 0.027 0.009 0.037 B2 C 1.40 0.055 0.45 0.60 0.017 0.024 C2 D 1.21 8.95 1.36 0.047 9.35 0.352 0.054 0.368 E 10.00 10.28 0.393 0.405 G L 4.88 15.00 5.28 0.192 15.85 0.590 0.208 0.624 L2 1.27 1.40 0.050 0.055 L3 R 1.40 V2 0° 1.75 0.055 0.40 0.069 0.016 8° 0° 8° FOOT PRINT DIMENSIONS (in millimeters) 16.90 MARKING : T1235 600G 10.30 5.08 1.30 3.70 8.90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change withoutnotice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. 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