STMICROELECTRONICS BUF420M

BUF420M
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■ SWITCH MODE POWER SUPPLIES
■ MOTOR CONTROL
DESCRIPTION
The BUF420M is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
1
2
TO-3
(version "R")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CEV
Collector-Emitter Voltage (V BE = -1.5V)
850
V
V CEO
Collector-Emitter Voltage (I B = 0)
450
V
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
7
V
Collector Current
30
A
Collector Peak Current (t p < 5 ms)
60
A
A
Base Current
6
I BM
Base Peak Current (t p < 5 ms)
9
A
P tot
Total Dissipation at T c = 25 o C
275
W
T stg
Storage Temperature
Tj
March 2002
Max. Operating Junction Temperature
-65 to 200
o
C
200
o
C
1/8
BUF420M
THERMAL DATA
R thj-case
Thermal Resistance Junction-Case
Max
o
0.63
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
I CER
Collector Cut-off
Current (R BE = 5 Ω)
V CE = 850 V
V CE = 850 V
T C = 100 o C
0.2
1
mA
mA
I CEV
Collector Cut-off
Current (V BE = -1.5V)
V CE = 850 V
V CE = 850 V
T C = 100 o C
0.2
1
mA
mA
IEBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
V EBO
VCE(sat) ∗
V BE(sat) ∗
di c /dt
V CE (3µs)
V CE (5µs)
I C = 200 mA
L = 25 mH
Emitter Base Voltage
(I C = 0)
I E = 50 mA
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
=
=
=
=
10A
10 A
20 A
20 A
IB
IB
IB
IB
=
=
=
=
1
1
4
4
A
A
A
A
IC
IC
IC
IC
=
=
=
=
10A
10 A
20 A
20 A
IB
IB
IB
IB
=
=
=
=
1
1
4
4
A
A
A
A
Base-Emitter
Saturation Voltage
Rate of rise on-state
Collector Current
Collector-Emitter
Dynamic Voltage
Collector-Emitter
Dynamic Voltage
V CC = 300 V
I B1 = 1.5 A
I B1 = 1.5 A
I B1 = 6 A
V
7
V
0.8
2.8
0.5
T C =100 o C
2
0.9
T C =100 o C
1.5
1.1
T C =100 o C
RC = 0
t p = 3 µs
T C =25 o C
T C =100 o C
T C =100 o C
1.5
100
R C = 60 Ω
T C =25 o C
T C =100 o C
2.1
V CC = 300 V
I B1 = 1.5 A
I B1 = 1.5 A
R C = 60 Ω
T C =25 o C
T C =100 o C
1.1
I C = 10 A
V BB = - 5 V
V clamp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.6 Ω
I B1 = 1 A
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I C = 10 A
V BB = - 5 V
V clamp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.6 Ω
I B1 = 1 A
T C =100 o C
Maximum Collector
Emitter Voltage
without Snubber
I C = 10 A
V BB = - 5 V
I B1 = 1 A
T C =125 o C
V CC = 50 V
R BB = 0.6 Ω
L = 0.25 mH
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I C = 10 A
V BB = 0
V clamp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.15 Ω
I B1 = 1 A
V
V
V
V
8
V
V
4
V
V
µs
µs
µs
1
0.05
0.08
2
0.1
0.18
500
V
V
V
V
A/µs
A/µs
A/µs
70
150
V CC = 300 V
I B1 = 1.5 A
I B1 = 1.5 A
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
ts
tf
tc
450
T C =100 o C
ts
tf
tc
V CEW
2/8
Test Conditions
µs
µs
µs
V
1.5
0.04
0.07
µs
µs
µs
BUF420M
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I C = 10 A
V BB = 0
V clamp = 400 V
L = 0.25 mH
V CC = 50 V
R BB = 0.15 Ω
I B1 = 1 A
T C =100 o C
Maximum Collector
Emitter Voltage
without Snubber
I C = 10 A
V BB = 0
I B1 = 1 A
T C =125 o C
V CC = 50 V
R BB = 0.15 Ω
L = 0.25 mH
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I C = 20 A
V BB = -5 V
V clamp = 400 V
L = 0.12 mH
V CC = 50 V
R BB =0.6 Ω
I B1 = 4 A
ts
tf
tc
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I C = 20 A
V BB = - 5 V
V clamp = 400 V
L = 0.12 mH
V CC = 50 V
R BB = 0.6 Ω
I B1 = 4 A
T C =125 o C
Maximum Collector
Emitter Voltage
without Snubber
I CWoff = 30 A
V BB = - 5 V
L = 0.12 mH
T C =125 o C
V CC = 50 V
R BB = 0.6 Ω
I B1 = 6 A
ts
tf
tc
V CEW
V CEW
Min.
Typ.
Max.
Unit
3
0.15
0.25
µs
µs
µs
500
V
µs
µs
µs
2.2
0.06
0.12
3.5
0.12
0.3
400
µs
µs
µs
V
3/8
BUF420M
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Forward Biased Safe Operating Area
Reverse Biased Safe Operating Area
4/8
BUF420M
Storage Time Versus Pulse Time.
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
5/8
BUF420M
Turn-on Switching Test Waveforms.
Turn-off Switching Test Waveforms
(inductive load).
6/8
BUF420M
TO-3 (version R) MECHANICAL DATA
mm
DIM.
MIN.
A
inch
TYP.
MAX.
MIN.
TYP.
11.7
B
MAX.
0.460
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9
0.429
N
16.9
0.665
P
26.2
R
3.88
1.031
4.09
U
0.152
39.50
V
1.555
30.10
1.185
A
P
D
C
O
N
B
V
E
G
U
0.161
R
P003N
7/8
BUF420M
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
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