BUL381D ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS ■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING ■ SWITCH MODE POWER SUPPLIES ■ DESCRIPTION The BUL381D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 800 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 9 V Collector Current 5 A Collector Peak Current (t p < 5 ms) 8 A Base Current 2 A IC I CM IB I BM Base Peak Current (t p < 5 ms) 4 A P tot Total Dissipation at T c = 25 o C 70 W T stg Storage Temperature Tj July 2003 Max. Operating Junction Temperature -65 to 150 o C 150 o C 1/6 BUL381D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.78 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 800 V V CE = 800 V I CEO Collector Cut-off Current (I B = 0) V CE = 400 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA Min. Typ. T j = 125 o C L = 25 mH Max. Unit 100 500 µA µA 250 µA 400 V 9 V Emitter-Base Voltage (I C = 0) I E = 10 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IC = 2 A IC = 3 A I B = 0.2 A I B = 0.4 A I B = 0.75 A 0.5 0.7 1.1 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A IC = 2 A I B = 0.2 A I B = 0.4 A 1.1 1.2 V V DC Current Gain I C = 2 A V CE = 5 V I C = 10 mA VCE = 5 V 8 10 ts tf RESISTIVE LOAD Storage Time Fall Time IC = 2 A V CC = 250 V t p = 30 µs I B1 = - I B2 = 0.4 A 1.5 2.5 0.8 µs µs ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 2 A V BE(off) = -5 V V CL = 250 V T j = 125 o C Vf Diode Forward Voltage I C = 2 A V EBO h FE ∗ I B1 = 0.4 A R BB = 0 Ω L = 200 µH 2.5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/6 µs ns 1.3 100 Derating Curve V BUL381D DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 BUL381D Reverse Biased SOA Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Resistive Load Switching Test Ciurcuit 1) Fast electronic switch 2) Non-inductive Resistor 4/6 BUL381D TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 0.116 L5 2.65 2.95 0.104 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 5/6 BUL381D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2003 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6