BUX98 BUX98A ® HIGH POWER NPN SILICON TRANSISTORS ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCY CONVERTERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 ■ 2 TO-3 (version R) DESCRIPTION The BUX98 and BUX98A are Silicon MultiEpitaxial Mesa NPN transistor in jedec TO-3 metal case, intended and industrial applications from single and three-phase mains operation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CES V CEO V EBO IC I CM I CP IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (R BE = ≤ 10 Ω) Collector-Base Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Collector Peak Current non Rep. (tp < 20 µs) Base Current Base Peak Current (t p < 5 ms) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature September 2003 Value BUX98 850 850 400 Unit BUX98A 1000 1000 450 7 30 60 80 8 30 250 -65 to 200 200 V V V V A A A A A W o C o C 1/4 BUX98 / BUX98A THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.7 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CER Collector Cut-off Current (R BE = 10 Ω) V CE = V CES V CE = V CES T case = 125 o C 1 8 µA µA I CES Collector Cut-off Current (V BE = 0 ) V CE = V CES V CE = V CES T case = 125 o C 400 4 µA mA I CEO Collector Cut-off Current (I B = 0) V CE = V CEO 2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 2 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 200 mA for BUX98 for BUX98A V CER(sus) ∗ Collector-Emitter Sustaining Voltage L = 2mH for BUX98 for BUX98A V CE(sat) ∗ V BE(sat) ∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage for BUX98 I C = 20 A for BUX98A I C = 16 A I C = 24 A for BUX98 I C = 20 A for BUX98A I C = 16 A t on Turn-on Time for BUX98 ts Storage Time V CC = 150 V tf Fall Time I B1 = - I B2 = 4 A t on Turn-on Time for BUX98A ts Storage Time V CC = 150 V tf Fall Time I B1 = - I B2 = 3.2 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 % 2/4 Min. 400 450 V V 850 1000 V V IC = 1 A IB = 4 A 1.5 V I B = 3.2 A IB = 5 A 1.5 5 V V IB = 4 A 1.6 V I B = 3.2 A 1.6 V 1 µs I C = 20 A 3 µs 0.8 µs 1 µs I C = 16 A 3 µs 0.8 µs BUX98 / BUX98A TO-3 (version R) MECHANICAL DATA mm DIM. MIN. A inch TYP. MAX. MIN. TYP. 11.7 B MAX. 0.460 0.96 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 R 3.88 1.031 4.09 U 0.152 39.50 V 1.555 30.10 1.185 A P D C O N B V E G U 0.161 R P003N 3/4 BUX98 / BUX98A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4