BUX98C ® HIGH POWER NPN SILICON TRANSISTOR ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS: HIGH FREQUENCY AND EFFICENCY CONVERTERS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The BUX98C is a Silicon Multi Epitaxial Mesa NPN transistor in Jedec TO-3 metal case, intended for use in switching and industrial applications from single and three-phase mains operations. 1 2 TO-3 (version R) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CER V CES V CEO V EBO IC I CM I CMP IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (R BE ≤ 0 Ω) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Collector Peak Current non Repetitive Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature September 2003 Value 1200 Unit V 1200 700 7 30 60 80 8 30 250 -65 to 200 200 V V V A A A A A W o C o C 1/4 BUX98C THERMAL DATA R thj-case Thermal Resistance Junction-case ELECTRICAL CHARACTERISTICS (Tcase = 25 Symbol Parameter Max o 0.7 C/W o C unless otherwise specified) Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off Current (R BE = 10 Ω) V CE = V CES V CE = V CES T case = 125 o C 1 8 mA mA I CES Collector Cut-off Current (V BE = 0 ) V CE = V CES V CE = V CES T case = 125 o C 1 6 mA mA I CEO Collector Cut-off Current (I B = 0) V CE = V CEO 2 mA I EBO Emitter Cut-off Current (I C = 0) V CB = 5 V 2 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA 700 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 12 A I C = 16 A I C = 20 A IB = 3 A IB = 5 A IB = 8 A 1.5 2 3 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 12 A I C = 20 A IB = 3 A IB = 8 A 1.6 2 V V Turn-on Time Storage Time Fall Time RESISTIVE LOAD VCC = 250 V I C = 12 A I B1 = - I B2 = 3 A 1 3 0.8 µs µs µs t on ts tf ∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 % 2/4 0.5 1.5 0.2 BUX98C TO-3 (version R) MECHANICAL DATA mm DIM. MIN. A inch TYP. MAX. MIN. TYP. 11.7 B MAX. 0.460 0.96 1.10 0.037 0.043 C 1.70 0.066 D 8.7 0.342 E 20.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 R 3.88 1.031 4.09 U 0.152 39.50 V 1.555 30.10 1.185 A P D C O N B V E G U 0.161 R P003N 3/4 BUX98C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4