STMICROELECTRONICS BUY69A

BUY69A
®
HIGH VOLTAGE NPN SILICON TRANSISTOR
■
■
■
■
■
■
STM PREFERRED SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
HIGH POWER TO-3 PACKAGE
APPLICATIONS:
HORIZONTAL DEFLECTION FOR COLOUR
TV
■ SWITCHING REGULATORS
■
DESCRIPTION
The BUY69A is a silicon Multi-Epitaxial mesa
NPN transistor in Jedec TO-3 metal case. It is
intended for horizontal deflection output stage of
CTV receivers and high voltage, fast switching
and industrial applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CES
Collector-Emitter Voltage (V BE = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
P tot
T stg
Tj
Value
Unit
1000
V
400
V
8
V
Collector Current
10
A
Collector Peak Current (tp ≤ 10 ms )
Base Current
15
A
3
A
o
Total Dissipation at T c ≤ 25 C
Storage Temperature
Max. Operating Junction Temperature
October 2003
100
W
-65 to 200
o
C
200
o
C
1/4
BUY69A
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
1.75
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 1000 V
1
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 8 V
1
mA
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 100 mA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 8 A
I B = 2.5 A
3.3
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 8 A
I B = 2.5 A
2.2
V
DC Current Gain
I C = 2.5 A
V CE = 10 V
Transition Frequency
I C = 0.5 A
V CE = 10 V
Second Breakdown
Collector Current
V CE = 25 V
Turn on Time
IC = 5 A
I B1 = 1 A
V CE = 250 V
ts
ts
Storage Time
Fall Time
IC = 5 A
I B1 = - I B2 = 1 A
V CE = 250 V
Fall Time
IC = 8 A
I B1 = - I B2 = 2.5 A
V CE = 40 V
tf
h FE ∗
fT
Is/b **
t on
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
∗∗ Pulsed: 1s, non repetitive pulse.
2/4
400
V
15
10
MHz
4
A
µs
0.2
1.7
0.3
µs
µs
1
µs
BUY69A
TO-3 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
A
P
C
O
N
B
V
E
G
U
D
R
P003F
3/4
BUY69A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
4/4