BUT70W ® HIGH POWER NPN TRANSISTOR ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICENCY CONVERTERS 3 2 ■ 1 TO-247 DESCRIPTION The BUT70W is a Multiepitaxial planar NPN transistor in TO-247 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CEV Collector-emitter Voltage (V BE = -1.5V) 200 V V CEO Collector-emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) I E(RMS) I EM IB Parameter 7 V Emitter Current 40 A Emitter Peak Current 120 A 8 A Base Current I BM Base Peak Current P tot Total Power Dissipation at T case < 25 C Storage Temperature T stg Tj o Max Operating Junction Temperature February 2002 24 A 200 W -65 to 150 o C 150 o C 1/4 BUT70W THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.63 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CER Collector Cut-off Current (R BE = 5Ω) V CE = 200 V V CE = 200 V T C = 100 o C 1 5 mA mA I CEV Collector Cut-off Current (V BE = -1.5V) V CE = 200 V V CE = 200 V T C = 100 o C 1 4 mA mA IEBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 0.2 A L = 25 mH 125 V 7 V V(BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 50 mA VCE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC = = = = 70 70 35 35 A A A A IB IB IB IB = = = = 7A 7A T C = 100 o C 1.75 A 1.75 A T C = 100 o C 0.9 1.5 0.9 1.2 V V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC IC IC IC = = = = 70 70 35 35 A A A A IB IB IB IB = = = = 7A 7A T C = 100 o C 1.75 A 1.75 A T C = 100 o C 1.8 1.9 1.4 1.4 V V V V dic /d t ∗ Rated of Rise of on-state Collector Current V CC = 100 V t p = 3 µs RC = 0 I B1 = 3.5 A T C = 100 o C 140 A/µs ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 2 % INDUCTIVE LOAD Symbol ts tf tc 2/4 Parameter Storage Time Fall Time Cross Over Time Test Conditions I C = 35 A V BB = -5 V ΙB1 = 1.75 A V CLAMP = 125V V CC = 90 V R B2 = 1.4 Ω L C = 0.15 mH T C = 100 o C Min. Typ. Max. Unit 1.8 0.2 0.35 µs µs µs BUT70W TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.582 L4 34.6 1.362 L5 5.5 0.217 M 2 3 0.079 0.118 P025P 3/4 BUT70W Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4