BUW48 BUW49 HIGH POWER NPN SILICON TRANSISTORS ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICENCY CONVERTERS 3 ■ DESCRIPTION The BUW48 and BUW49 are Multiepitaxial planar NPN transistor in TO-218 plastic package. It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. 2 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CEV Collector-emitter Voltage (V BE = -1.5V) V CEO Collector-emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC I CM IB Collector Peak Current Base Current I BM Base Peak Current Total Power Dissipation at T case < 25 o C T stg Storage Temperature July 1997 Max Operating Junction Temperature Unit BUW48 BUW49 Unit 120 160 V 60 80 V Collector Current P tot Tj Value 7 V 30 A 45 40 A 8 6 A 12 10 150 A W -65 to 175 o C 175 o C 1/4 BUW48 / BUW49 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEX Collector Cut-off Current V CE = V CEX VBE = -1.5V V CE = V CEX V BE = -1.5V T c =125 o C 1 3 mA mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EB0 I C = 0.2A L = 25 mH for BUW48 for BUW49 Emitter-base Voltage (I c = 0) I E = 50 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 40A I C = 30A Transition Frequency I C = 1A fT = = = = 20A 40A 15A 30A 60 80 V V 7 V BUW48 BUW49 BUW48 BUW49 0.6 1.4 0.5 1.2 V V V V I B = 4A I B = 3A for BUW48 for BUW49 2.1 2 V V VCE = 15V f = 15 MHz IB IB IB IB = = = = 2A 4A 1.5A 3A for for for for 8 MHz RESISTIVE LOAD Symbol Parameter Test Conditions t on ts tf Turn-on Time Storage Time Fall Time for BUW48 V CC = 60V I B1 = -IB2 = 4A I C = 40A ts tf Storage Time Fall Time for BUW48 V CC = 60V I B1 = -IB2 = 4A I C = 40A t on ts tf Turn-on Time Storage Time Fall Time for BUW49 V CC = 80V I B1 = -IB2 = 4A I C = 30A ts tf Storage Time Fall Time for BUW49 V CC = 80V I B1 = -IB2 = 4A I C = 30A ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 % 2/4 Min. Typ. Max. Unit 1.2 0.6 0.17 1.5 1.1 0.25 µs µs µs 1.65 0.5 µs µs 1.2 1.1 0.25 µs µs µs 1.65 0.5 µs µs 0.8 0.6 0.15 BUW48 / BUW49 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 31 0.163 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 3/4 BUW48 / BUW49 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4