BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATIONS: MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICIENCY CONVERTERS ■ DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency converters and motor controls. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 500 V V CEO Collector-Emitter Voltage (I B = 0) 250 V V EBO Emitter-Base Voltage (I C = 0) IE I EM IB Parameter Emitter-Current V A Emitter Peak Current (t p < 5ms) 70 A Base Current 15 A 18 A I BM Base Peak Current (t p < 5ms) P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj 7 60 o Max. Operating Junction Temperature 180 W -65 to 150 o C 150 o C For PNP type voltage and current values are negative. July 1997 1/4 BUTW92 THERMAL DATA R thj-case Thermal Resistance Junction-case MAX o 0.7 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES Parameter Test Conditions Min. Max. Unit 50 1 µA mA 50 µA Collector Cut-off Current (V BE = -1.5V) V CE = 450 V VCE = 450 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CES Collector-Emitter Breakdown Voltage (V EB =0) IC = 5 mA 500 V V EBO Emitter-Base Breakdown Voltage (I C = 0) I E = 50 mA 7 V 250 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B =0) o T C = 100 C I C = 200 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 60 A I C = 60 A IB = 15 A IB = 15 A T C = 100 o C V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 60 A I C = 60 A IB = 15 A IB = 15 A T C = 100 o C DC Current Gain I C = 60 A I C = 60 A IC = 5 A h FE ∗ ts tf RESISTIVE LOAD Storage Time Fall Time V CE = 3 V V CE = 3 V T C = 100 o C V CE = 3 V I C = 50 A I B1 = -IB2 = 10 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 Typ. V CC = 250 V 0.8 1.1 1 1.5 V V 1.9 2 V V 9 6 65 1.2 250 1.4 300 µs ns BUTW92 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 3/4 BUTW92 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4