BUR51 HIGH CURRENT NPN SILICON TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CBO Collector-Base Voltage (I E = 0) 300 V V CEO Collector-Emitter Voltage (I B = 0) 200 V V EBO Emitter-Base Voltage (I C = 0) 10 V Collector Current 60 A Collector Peak Current (t p = 10 ms) 80 A Base Current 16 A IC I CM IB Parameter o P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj June 1997 Max. Operating Junction Temperature 350 W -65 to 200 o C 200 o C 1/4 BUR51 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = 300 V V CB = 300 V I CEO Collector Cut-off Current (I B = 0) V CE =200 V I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage V EBO Typ. T case = 125 o C I C = 200 mA Max. Unit 0.2 2 mA mA 1 mA 0.2 µA 200 V 10 V Emitter-base Voltage (I C = 0) I E = 10 mA Collector-emitter Saturation Voltage I C = 30 A I C = 50 A IB = 2 A IB = 5 A 0.9 1 1.5 V V Base-emitter Saturation Voltage I C = 30 A I C = 50 A IB = 2 A IB = 5 A 1.55 1.8 2 V V DC Current Gain IC = 5 A I C = 50 A V CE = 4 V V CE = 4 V Second Breakdown Collector Current V CE = 20 V t=1s fT Transition-Frequency IC = 1 A f = 1 MHz V CE = 5 V t on Turn-on Time IC = 50 A V CC = 100 V I B1 = 5 A 0.35 ts Storage Time I B1 = 5 A V CC = 100 V 2 µs Fall Time IC = 50 A I B2 = -5 A 0.9 tf 0.24 0.6 µs V clamp = 200 V L = 500 µH V CE(sat) ∗ V BE(sat) ∗ h FE ∗ I s/b Clamped E s/b Collector Current ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 Min. 20 15 100 17.5 10 50 A 16 MHz 1 µs A BUR51 TO-3 (I) MECHANICAL DATA mm DIM. inch MIN. TYP. MAX. MIN. TYP. MAX. A 11 11.7 13.1 0.433 0.461 0.516 B 1.45 1.5 1.6 0.057 0.059 0.063 C 2.7 2.92 0.106 0.115 D 8.9 9.4 0.350 0.370 E 19 20 0.748 0.787 G 10.7 10.9 11.1 0.421 0.429 0.437 N 16.5 16.9 17.2 0.650 0.665 0.677 P 25 26 0.984 1.024 R 3.88 4.2 0.153 0.165 U 38.5 39.3 1.516 1.547 V 30 30.3 1.181 30.14 1.187 1.193 P003I 3/4 BUR51 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4