BUX80 HIGH VOLTAGE NPN SILICON POWER TRANSISTOR ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED APPLICATIONS SWITCHING REGULATORS ■ MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICENCY CONVERTERS ■ 1 2 DESCRIPTION The BUX80 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, particularly intended for converters, inverters, switching regulators and motors control system applications. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-emitter Voltage (V BE = 0) 800 V V CER Collector-emitter Voltage (R BE = 50Ω) 500 V V CEO Collector-emitter Voltage (I B = 0) 400 V V EBO Emitter-base Voltage (Ic = 0) 10 V IC I CM IB Parameter Collector Current 10 A Collector Peak Current 15 A 5 A Base Current P tot Total Power Dissipation at T case T stg Storage Temperature Tj June 1997 ≤ 40 C Max Operating Junction Temperature o 100 W -65 to 150 o C 150 o C 1/4 BUX80 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Test Conditions Collector Cut-off Current (V BE = 0) V CE = 800 V V CE = 800 V Emitter Cut-off Current (I C = 0) V BE = 10 V Min. Typ. o T case = 125 C Max. Unit 1 3 mA mA 10 mA V CEO(sus) ∗ Collector-Emitter SustainingVoltage (I B = 0) I C = 100 mA 400 V V CER(sus) ∗ Collector-Emitter Sustaining Voltage (R BE = 50 Ω) I C = 100 mA 500 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 5 A IC = 8 A IB = 1 A I B = 2.5 A 1.5 3 V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 5 A IC = 8 A IB = 1 A I B = 2.5 A 1.4 1.8 V V DC Current Gain I C = 1.2 A V CE = 5 V t on Turn-on Time IC = 5 A V CC = 250 V I B1 = 1 A 0.5 µs ts Storage Time IC = 5 A I B2 = - 2 A I B1 = 1 A V CC = 250 V 3.5 µs tf Fall Time IC = 5 A I B2 = - 2 A I B1 = 1 A V CC = - 250 V 0.5 µs h FE ∗ ∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 % 2/4 30 BUX80 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 BUX80 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4