STMICROELECTRONICS MJE5852

MJE5852
HIGH VOLTAGE PNP POWER TRANSISTOR
■
■
■
SGS-THOMSON PREFERRED SALESTYPE
PNP TRANSISTOR
HIGH VOLTAGE CAPABILITY
APPLICATIONS:
SWITCHING REGULATORS
■ MOTOR CONTROL
■ INVERTERS
■
DESCRIPTION
The MJE5852 is manufactured using high voltage
PNP multiepitaxial technology for high switching
speed and high voltage capability.
It is intended for use in high frequency and
efficiency converters, switching regulators and
motor control.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
450
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
7
V
Collector Current
8
A
IC
I CM
IB
Parameter
Collector Peak Current (t p < 5ms)
Base Current
I BM
Base Peak Current (t p < 5ms)
P tot
Total Dissipation at T c ≤ 25 C
T stg
Storage Temperature
Tj
o
Max. Operating Junction Temperature
16
A
4
A
8
A
80
W
-65 to 150
o
C
150
o
C
For PNP type voltage and current values are negative.
July 1997
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MJE5852
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
1.56
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = -1.5V)
V CE = 450 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 6 V
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B =0)
I C = 10 mA
Min.
Typ.
Max.
Unit
500
µA
1
mA
400
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 4 A
IC = 8 A
IB = 1 A
IB = 3 A
2
5
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 4 A
IB = 1 A
1.5
V
DC Current Gain
IC = 2 A
IC = 5 A
V CE = 5 V
V CE = 5 V
2
0.5
µs
µs
h FE ∗
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
IC = 4 A
I B1 = -IB2 = 1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
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V CC = 250 V
t p = 40 µs
15
5
MJE5852
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
1.27
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
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MJE5852
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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