MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching speed and high voltage capability. It is intended for use in high frequency and efficiency converters, switching regulators and motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit V CES Collector-Emitter Voltage (V BE = 0) 450 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 7 V Collector Current 8 A IC I CM IB Parameter Collector Peak Current (t p < 5ms) Base Current I BM Base Peak Current (t p < 5ms) P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj o Max. Operating Junction Temperature 16 A 4 A 8 A 80 W -65 to 150 o C 150 o C For PNP type voltage and current values are negative. July 1997 1/4 MJE5852 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = -1.5V) V CE = 450 V I EBO Emitter Cut-off Current (I C = 0) V EB = 6 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B =0) I C = 10 mA Min. Typ. Max. Unit 500 µA 1 mA 400 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 4 A IC = 8 A IB = 1 A IB = 3 A 2 5 V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 4 A IB = 1 A 1.5 V DC Current Gain IC = 2 A IC = 5 A V CE = 5 V V CE = 5 V 2 0.5 µs µs h FE ∗ ts tf RESISTIVE LOAD Storage Time Fall Time IC = 4 A I B1 = -IB2 = 1 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/4 V CC = 250 V t p = 40 µs 15 5 MJE5852 TO-220 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 1.27 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 MJE5852 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4