BU810 MEDIUM VOLTAGE NPN FAST-SWITCHING DARLINGTON TRANSISTOR ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON LOW BASE-DRIVE REQUIREMENTS FAST SWITCHING SPEED INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS HORIZONTAL DEFLECTION FOR MONOCHROME TVs ■ GENERAL PURPOSE SWITCHING ■ 3 1 DESCRIPTION The BU810 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. 2 TO-220 INTERNAL SCHEMATIC DIAGRAM R = 200 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) 600 V V CEO Collector-Emitter Voltage (I B = 0) 400 V V EBO Emitter-Base Voltage (I C = 0) 5 V Collector Current 7 A 10 A 2 A IC I CM IB P tot T stg Tj June 1997 Collector Peak Current Base Current Total Power Dissipation at T case ≤ 25 C o Storage Temperature Junction Temperature 75 W -65 to 150 o C 150 o C 1/4 BU810 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.66 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CES Collector Cut-off Current (V BE = 0) V CE = 600 V 200 µA I CEO Collector Cut-off Current (IB = 0) V CE = 400 V 1 mA I EBO ∗ Emitter Cut-off Current (I C = 0) V EB = 5 V 150 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 0.1 A 400 V V CE(sat) ∗ Collector-Emitter Saturation Voltage IC = 2 A IC = 4 A IC = 7 A IB = 20 mA IB = 200 mA IB = 0.7 A 2 2.5 3 V V V V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IC = 4 A IB = 20 mA IB = 200 mA 2.2 3 V V 3 V Max. Unit 0.6 1.5 0.5 µs µs µs Max. Unit VF Diode Forward Voltage I F = 7 A RESISTIVE SWITCHING TIMES Symbol t on ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions V Clamp = 250V V BE(off) = -5 V I C = 2A Min. Typ. IB1 = 20mA INDUCTIVE SWITCHING TIMES Symbol Parameter Test Conditions Typ. ts tf Storage Time Fall Time V Clamp = 250V V BE(off) = -5 V I C = 2A IB1 = 20mA L = 500µH 1.5 0.4 µs µs ts tf Storage Time Fall Time V Clamp = 250V V BE(off) = -5 V I C = 7A IB1 = 0.7A L = 500µH 1.5 0.4 µs µs * Pulsed : Pulse duration = 300 µs, duty cycle = 2% 2/4 Min. BU810 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 0.409 16.4 L4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L7 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 3/4 BU810 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4