BUW48 BUW49 ® HIGH POWER NPN SILICON TRANSISTORS ■ ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW SATURATION VOLTAGE AND HIGH GAIN 3 APPLICATION SWITCHING REGULATORS ■ MOTOR CONTROL ■ HIGH FREQUENCY AND EFFICENCY CONVERTERS 2 ■ DESCRIPTION The BUW48 and BUW49 are Multi-Epitaxial Planar NPN transistor in TO-218 plastic package. They are intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. 1 TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CEV Collector-Emitter Voltage (V BE = -1.5 V) V CEO Collector-Emitter Voltage (I B = 0) V EBO Emitter-Base Voltage (I C = 0) IC I CM IB Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) P tot Total Dissipation at T c = 25 o C T stg Storage Temperature Max. Operating Junction Temperature October 2003 Unit BUW48 BUW49 120 160 V 60 80 V Collector Current I BM Tj Value 7 V 30 A 45 40 A 8 6 A 12 10 A 150 W -65 to 175 o C 175 o C 1/4 BUW48 BUW49 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I EBO Parameter Collector Cut-off Current (V BE = -1.5V Emitter Cut-off Current (I C = 0) V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Conditions V CE = V CEX = V CEX V EB = 5 V I C = 0.2A L = 25 mH for BUW48 for BUW49 I E = 50 mA V CE(sat) ∗ Collector-Emitter Saturation Voltage IC IC IC IC V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 40A I C = 30A Transition Frequency I C = 1A fT Typ. T C =125 o C VCE Emitter-base Voltage (I C = 0) V EBO Min. = = = = 20A 40A 15A 30A IB IB IB IB = = = = 2A 4A 1.5A 3A for for for for I B = 4A I B = 3A Unit 1 3 mA mA 1 mA 60 80 V V 7 V BUW48 BUW48 BUW49 BUW49 for BUW48 for BUW49 V CE = 15V Max. f = 15 MHz 0.6 1.4 0.5 1.2 V V V V 2.1 2 V V 8 MHz RESISTIVE LOAD Symbol Parameter Test Conditions t on ts tf Turn-on Time Storage Time Fall Time for BUW48 V CC = 60V I B1 = -IB2 = 4A ts tf Storage Time Fall Time for BUW48 V CC = 60V I B1 = -IB2 = 4A t on ts tf Turn-on Time Storage Time Fall Time for BUW49 V CC = 80V I B1 = -IB2 = 4A ts tf Storage Time Fall Time for BUW49 V CC = 80V I B1 = -IB2 = 4 ∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 % 2/4 I C = 40A Min. Typ. Max. Unit 1.2 0.6 0.17 1.5 1.1 0.25 µs µs µs 1.65 0.5 µs µs 1.2 1.1 0.25 µs µs µs 1.65 0.5 µs µs I C = 40A T C =100 o C I C = 30A I C = 30A T C =100 o C 0.8 0.6 0.15 BUW48 BUW49 TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.7 4.9 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.5 0.098 E 0.5 0.78 0.019 0.030 F 1.1 1.3 0.043 0.051 G 10.8 11.1 0.425 0.437 H 14.7 15.2 0.578 0.598 L2 – 16.2 – 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 31 0.163 1.220 – 12.2 – 0.480 Ø 4 4.1 0.157 0.161 D C A E R L6 L5 H G L3 L2 F ¯ R 1 2 3 P025A 3/4 BUW48 BUW49 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics – All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4