STMICROELECTRONICS EMIF04

EMIF04-MMC02F2
®
4 LINES EMI FILTER
INCLUDING ESD PROTECTION
IPAD™
MAIN PRODUCT CHARACTERISTICS:
Where EMI filtering in ESD sensitive equipment is
required:
■ MultiMedia Card for mobile phones, Personal
Digital Assistant, Digital Camera, MP3 players...
DESCRIPTION
The EMIF04-MMC02 is a highly integrated devices designed to suppress EMI/RFI noise for MultiMedia Card port. The EMIF04 flip chip packaging
means the package size is equal to the die size.
This filter includes an ESD protection circuitry
which prevents the device from destruction when
subjected to ESD surges up 15kV.
Flip-Chip
(11 Bumps)
Table 1: Order Code
Part Number
EMIF04-MMC02F2
BENEFITS
■ EMI symmetrical (I/O) low-pass filter
■ High efficiency in EMI filtering
■ Lead free package
■ Very low PCB space consuming:
1.57 mm x 2.07 mm
■ Very thin package: 0.65 mm
■ High efficiency in ESD suppression
■ High reliability offered by monolithic integration
■ High reducing of parasitic elements through
integration & wafer level packaging.
Marking
FH
Figure 1: Pin Configuration (ball side)
COMPLIES WITH THE FOLLOWING STANDARDS:
IEC61000-4-2
Level 4
15kV (air discharge)
8kV (contact discharge)
3
2
1
I1
O1
I2
VD2
O2
B
I3
VD1
O3
C
I4
GND
O4
D
A
Figure 2: Configuration
VD2
R20
VD1
R10
R1
O1 (Data)
I1
R2
I2
R3
I3
O2 (CLK)
O3 (CMD)
O4
I4
R4
Cline = 20pF max.
GND
TM: IPAD is a trademark of STMicroelectronics.
April 2005
REV. 2
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EMIF04-MMC02F2
Table 2: Absolute Ratings (Tamb = 25°C))
Symbol
Parameter and test conditions
Value
Unit
PR
DC power per resistor
70
mW
Tj
Maximum junction temperature
125
°C
Top
Operating temperature range
- 40 to + 85
°C
Tstg
Storage temperature range
- 55 to + 150
°C
Table 3: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
RI/O
Series resistance between Input & Output
Cline
Input capacitance per line
Symbol
Test conditions
VBR
IR = 1 mA
IRM
VRM = 3V
Cline
@ 0V
Min.
Typ.
Max.
6
Unit
V
100
500
nA
20
pF
R1,R2,R3,R4
Tolerance ± 5%
47
Ω
R10
Tolerance ± 5%
13
kΩ
R20
Tolerance ± 5%
56
kΩ
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EMIF04-MMC02F2
Figure 3: S21 (dB) attenuation measurement
and Aplac simulation
Figure 4: Crosstalk measurements
Xtalk measurements C3/B1
EMIF04-MMC02F2: Aplac vs measurement (C3/C1 line)
0.00
dB
- 5.00
0.00
dB
-10.00
Simulation
- 10.00
-20.00
Measurement
- 15.00
-30.00
- 20.00
-40.00
- 25.00
- 30.00
-50.00
- 35.00
-60.00
- 40.00
-70.00
- 45.00
-80.00
1.0M
- 50.00
1.0M
3.0M
10.0M
30.0M
100.0M
f/Hz
300.0M
1.0G
3.0G
Figure 5: ESD response to IEC61000-4-2
(+15kV air discharge) on one input V(in) and on
one output (Vout)
3.0M
10.0M
30.0M
100.0M 300.0M
f/Hz
1.0G
3.0G
Figure 6: ESD response to IEC61000-4-2 (-15kV
air discharge) on one input V(in) and on one
output (Vout)
V(in)
V(in)
V(out)
V(out)
Figure 7: Junction capacitance versus reverse
voltage applied (typical values)
C(pF)
20
F=1MHz
Vosc=30mVRMS
Tj=25°C
18
16
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VR(V)
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EMIF04-MMC02F2
Figure 8: Aplac model device structure
B2
C2
R20
R10
R1
A2
A3
R2
B1
B3
R3
C3
C1
R4
D1
D3
MODEL = demif04
MODEL = demif04
MODEL = demif04_gnd
DEMIF04
BV = 7
IBV = 1m
CJO = Cz
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
120pH
100m
D2
DEMIF04 gnd
BV = 7
IBV = 1m
CJO = Cz_gnd
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
Figure 9: Aplac model connections
D2
Cins
Rins
Rins
A3
Cins
A2
Lbump
Cins
Rins
Rins
Cins
Rbump
B3
Cins
B1
Rins
Rins
Lhole
C3
C1
cap_hole
Cins
Rins
Rhole
Rins
D3
Cins
D1
Rins
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Cins
Cins
Rins
Cins
R1 47 opt
R2 47
R3 47
R4 47
R10 13k
R20 56k
Cz 15pF opt
Cz_gnd 45pF opt
Ls 450pH opt
Rs 300m
Rbump 50m
Lbump 50pH
lhole 940pH opt
Rhole 100m
cap_hole 0.15pF
Cins 200fF
Rins 10Meg
EMIF04-MMC02F2
Figure 10: Order Code
EMIF
yy
-
xxx zz
Fx
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip-Chip
x = 1: 500µm, Bump = 315µm
= 2: Leadfree Pitch = 500µm, Bump = 315µm
= 3: Leadfree Pitch = 400µm, Bump = 250µm
Figure 11: FLIP-CHIP Package Mechanical Data
650µm ± 65
315µm ± 50
2.07mm ± 50µm
500µm ± 50
500µm ± 50
1.57mm ± 50µm
Figure 12: Foot Print Recommendations
Dot, ST logo
xx = marking
z = packaging location
yww = datecode
(y = year
ww = week)
545
E
Solder stencil opening : 330µm
x x z
y ww
100
230
Solder mask opening recommendation :
340µm min for 315µm copper pad diameter
400
545
Copper pad Diameter :
250µm recommended , 300µm max
Figure 13: Marking
All dimensions in µm
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EMIF04-MMC02F2
Figure 14: FLIP-CHIP Tape and Reel Specification
Dot identifying Pin A1 location
1.75 +/- 0.1
Ø 1.5 +/- 0.1
4 +/- 0.1
3.5 +/- 0.1
ST E
xxz
yww
ST E
xxz
yww
ST E
xxz
yww
8 +/- 0.3
0.73 +/- 0.05
4 +/- 0.1
User direction of unreeling
All dimensions in mm
Table 4: Ordering Information
Ordering code
Marking
Package
Weight
Base qty
Delivery mode
EMIF04-MMC02F22
FH
Flip-Chip
4.5 mg
5000
Tape & reel 7”
Note: More packing informations are available in the application note
AN1235: “Flip-Chip: Package description and recommendations for use”
AN1751: "EMI Filters: Recommendations and measurements"
Table 5: Revision History
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Date
Revision
14-Oct-2004
1
First issue.
Description of Changes
06-Apr-2005
2
Minor layout update. No content change.
EMIF04-MMC02F2
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
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