STMICROELECTRONICS EMIF04

EMIF04-MMC02F2
4-line IPAD™, EMI filter including ESD protection
Features
■
EMI symmetrical (I/O) low-pass filter
■
High efficiency in EMI filtering
■
Lead-free package
■
Very low PCB space occupation:
1.57 mm x 2.07 mm
■
Very thin package: 0.65 mm
■
High efficiency in ESD suppression
■
High reliability offered by monolithic integration
■
High reduction of parasitic elements through
integration and wafer level packaging
Flip Chip
11 bumps
Figure 1.
Complies with the standards:
■
IEC 61000-4-2 Level 4
– 15 kV (air discharge)
– 8 kV (contact discharge)
Application
Where EMI filtering in ESD sensitive equipment is
required:
■
Figure 2.
Pin layout (bump side)
3
2
1
I1
O1
I2
VD2
O2
B
I3
VD1
O3
C
I4
GND
O4
D
A
Device configuration
MultiMediaCard for mobile phones, personal
digital assistant, digital camera, MP3 players...
VD2
R20
VD1
R10
R1
Description
O1 (Data)
I1
R2
I2
R3
I3
The EMIF04-MMC02 is a highly integrated device
designed to suppress EMI/RFI noise for a
MultiMediaCard port. The EMIF04 Flip Chip
packaging means the package size is equal to the
die size.
O2 (CLK)
O3 (CMD)
O4
I4
R4
Cline = 20pF max.
GND
This filter includes ESD protection circuitry, which
prevents damage to the application when it is
subjected to ESD surges up to 15 kV.
TM: IPAD is a trademark of STMicroelectronics.
April 2008
Rev 4
1/8
www.st.com
8
Electrical characteristics
1
EMIF04-MMC02F2
Electrical characteristics
Table 1.
Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Unit
PR
DC power per resistor
70
mW
Tj
Junction temperature
125
°C
Top
Operating temperature range
-40 to + 85
°C
Tstg
Storage temperature range
-55 to +150
°C
\
Table 2.
Electrical characteristics (Tamb = 25 °C)
Symbol
Parameters
VBR
Breakdown voltage
IRM
Leakage current @ VRM
VRM
Stand-off voltage
VCL
Clamping voltage
Rd
Dynamic impedance
IPP
Peak pulse current
RI/O
Series resistance between input and
output
Cline
Input capacitance per line
Symbol
2/8
Value
Test conditions
VBR
IR = 1 mA
IRM
VRM = 3 V
Cline
@0V
Min
Typ
Max
6
Unit
V
0.1
0.5
µA
20
pF
R1,R2,R3,R4 Tolerance ± 5%
47
Ω
R10
Tolerance ± 5%
13
kΩ
R20
Tolerance ± 5%
56
kΩ
EMIF04-MMC02F2
Figure 3.
Electrical characteristics
S21 (dB) attenuation measurement Figure 4.
and Aplac simulation
Xtalk measurements C3/B1
EMIF04-MMC02F2: Aplac vs measurement (C3/C1 line)
0.00
dB
- 5.00
Cross talk measurement
0.00
dB
-10.00
Simulation
- 10.00
-20.00
Measurement
- 15.00
-30.00
- 20.00
- 25.00
-40.00
- 30.00
-50.00
- 35.00
-60.00
- 40.00
-70.00
- 45.00
- 50.00
1.0M
Figure 5.
3.0M
10.0M
30.0M
100.0M
f/Hz
300.0M
1.0G
-80.00
1.0M
3.0G
ESD response to IEC 61000-4-2
(+15kV contact discharge) on one
input (Vin) and one output (Vout)
Figure 6.
3.0M
10.0M
100.0M 300.0M
f/Hz
1.0G
3.0G
ESD response to IEC 61000-4-2
(-15kV contact discharge) on one
input (Vin) and one output (Vout)
Vin
Vin
Vout
Figure 7.
30.0M
Vout
Junction capacitance versus reverse applied voltage typical values
C(pF)
20
F=1MHz
Vosc=30mVRMS
Tj=25°C
18
16
14
12
10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VR(V)
3/8
Application information
2
EMIF04-MMC02F2
Application information
Figure 8.
Device structure
B22
C22
R20
R10
R1
A22
A33
R2
B33
B11
R3
C33
C11
R4
D11
D33
MODEL = demif04
MODEL = demif04
bulk
Model demif04
BV = 7
IBV = 1m
CJO = Cz
M = 0.3333
RS = 1
VJ = 0.6
TT = 100n
MODEL = demif04_gnd
D2
Figure 9.
Aplac model connections
Rbump Lbump
D2
Rbump Lbump
A33
A3
+
+
bulk
Rbump
Rbump Lbump
B33
+
+
bulk
Rbump Lbump
B22
B2
B11
B1
+
bulk
Cbump Rbump
Cbump Rbump
Cbump Rbump
Rbump Lbump
Rbump Lbump
Rbump Lbump
C33
C3
+
Lgnd
bulk
Cbump Rbump
Cgnd
bulk
Cbump Rbump
Rbump Lbump
B3
A22
A2
Cbump Rbump
Lbump
C22
C2
+
+
bulk
Cbump Rbump
D3
D11
D1
Rgnd
+
Cbump Rbump
bulk
+
Cbump Rbump
Diodes
aplacvar Cz 14.9pF
aplacvar Cz_gnd 47.9pF
aplacvar Rs_gnd 480 m
bulk
Cbump Rbump
Rbump Lbump
D33
Device
aplacvar R1 50.053
aplacvar R2 50.053
aplacvar R3 50.053
aplacvar R4 50.053
aplacvar R10 13 k
aplacvar R20 56 k
aplacvar Rsub 120 m
bulk
C11
C1
Rbump Lbump
4/8
Model demif04 gnd
BV = 7
IBV = 1m
CJO = Cz_gnd
M = 0.3333
RS = RS_gnd
VJ = 0.6
TT = 100n
bulk
Bumps
aplacvar Rbump 20 m
aplacvar Lbump 50 pH
aplacvar Cbump 1.5 p
Gnd
aplacvar Lgnd 95 pH
aplacvar Rgnd 100 m
aplacvar Cgnd 0.6 pF
EMIF04-MMC02F2
3
Ordering information scheme
Ordering information scheme
Figure 10. Ordering information scheme
EMIF
yy
-
xxx zz
Fx
EMI Filter
Number of lines
Information
x = resistance value (Ohms)
z = capacitance value / 10(pF)
or
3 letters = application
2 digits = version
Package
F = Flip Chip
x = 2: Lead-free, pitch = 500 µm, bump = 315 µm
Package information
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the inner box label, in compliance with JEDEC
Standard JESD97. The maximum ratings related to soldering conditions are also marked on
the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at
www.st.com.
Figure 11. Flip Chip dimensions
500 µm ± 50
315 µm ± 50
650 µm ± 65
2.07mm ± 50 µm
500 µm ± 50
285 µm
1.57mm ± 50 µm
285 µm
4
5/8
Ordering information
EMIF04-MMC02F2
Figure 12. Footprint
Figure 13. Marking
Dot, ST logo
xx = marking
z = manufacturing location
yww = datecode
(y = year
ww = week)
Copper pad Diameter:
250 µm recommended, 300 µm max
E
x x z
y ww
Solder stencil opening: 330 µm
Solder mask opening recommendation:
340 µm min for 315 µm copper pad diameter
Figure 14. Flip Chip tape and reel specification
Dot identifying Pin A1 location
3.5 ± 0.1
2.17
xxz
yww
ST E
1.67
User direction of unreeling
Ordering information
Table 3.
Ordering information
Order code
EMIF04-MMC02F2
Note:
xxz
yww
4 ± 0.1
All dimensions in mm
5
ST E
xxz
yww
ST E
8 ± 0.3
0.73 ± 0.05
Marking
Package
Weight
Base qty
Delivery mode
FH
Flip Chip
4.5 mg
5000
Tape and reel (7”)
More packing information is available in the applications note:
AN1235: “Flip Chip: package description and recommendations for use”
AN 1751: “EMI filters: Recomendations and measurements”
6/8
1.75 ± 0.1
Ø 1.5 ± 0.1
4 ± 0.1
EMIF04-MMC02F2
6
Revision history
Revision history
Table 4.
Document revision history
Date
Revision
Changes
14-Oct-2004
1
First issue
06-Apr-2005
2
Minor layout update. No content change.
25-Aug-2005
3
Reformatted to current standard, Aplac model updated in section 2.
28-Apr-2008
4
Updated ECOPACK statement. Updated Figure 10, Figure 11 and Figure
14. Reformatted to current standards.
7/8
EMIF04-MMC02F2
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