FDD86252 N-Channel PowerTrench® MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 52 m: at VGS = 10 V, ID = 5 A Max rDS(on) = 72 m: at VGS = 6 V, ID = 4 A 100% UIL tested RoHS Compliant Application DC - DC Conversion D D G S G D -P-2A52 K TO (T O -252) S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 42 27 (Note 1a) -Pulsed 5 A 25 Single Pulse Avalanche Energy EAS Ratings 150 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 72 89 (Note 1a) Operating and Storage Junction Temperature Range 3.1 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.4 (Note 1a) 40 °C/W Package Marking and Ordering Information Device Marking FDD86252 Device FDD86252 ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C Package D-PAK(TO-252) 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDD86252 N-Channel PowerTrench® MOSFET September 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 104 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C -10 VGS = 10 V, ID = 5 A 41 52 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 4 A 49 72 VGS = 10 V, ID = 5 A,TJ = 125 °C 81 103 VDS = 10 V, ID = 5 A 15 gFS Forward Transconductance 2.0 3.1 mV/°C m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 741 985 pF 78 130 pF 4.2 10 pF : 0.4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg 8.3 17 VDD = 75 V, ID = 5 A, VGS = 10 V, RGEN = 6 : 1.8 10 ns 14 25 ns 3 10 ns Total Gate Charge VGS = 0 V to 10 V 11.3 16 nC VGS = 0 V to 5 V 6.3 9 Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 5 A ns nC 3.4 nC 2.6 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 5 A (Note 2) 0.80 1.3 VGS = 0 V, IS = 2.6 A (Note 2) 0.77 1.2 IF = 5 A, di/dt = 100 A/Ps V 60 97 ns 72 115 nC Notes: 1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RTJCis guaranteed by design while RTJA is determined by the user’s board design. a) 40 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 96 °C/W when mounted on a minimum pad 2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3: Starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 135 V, VGS = 10 V. ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C 2 www.fairchildsemi.com FDD86252 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 25 VGS = 6 V 20 VGS = 5.5 V 15 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 10 VGS = 5 V 5 0 VGS = 4.5 V 0 1 2 3 4 VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 0 5 0 5 Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 -50 200 150 TJ = 125 oC 100 50 TJ = 25 oC 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage 30 25 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 25 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX ID = 5 A 0 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature 20 VDS = 5 V 15 TJ = 150 oC 10 TJ = 25 oC 5 TJ = -55 oC 0 20 250 2.0 0.4 -75 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 5 A VGS = 10 V 2.2 10 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 2.4 VGS = 10 V PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 2 3 4 5 6 10 TJ = 150 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 7 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C 3 1.2 www.fairchildsemi.com FDD86252 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 1000 ID = 5 A Ciss VDD = 50 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V 6 VDD = 100 V 4 100 Coss 10 2 0 0 3 6 9 1 0.1 12 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 30 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 25 VGS = 10 V 20 VGS = 6 V 15 10 5 o RTJC = 1.4 C/W 1 0.001 0.01 0.1 1 0 25 10 75 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 5000 P(PK), PEAK TRANSIENT POWER (W) 50 10 100 Ps THIS AREA IS LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED 1 ms RTJC = 1.4 oC/W 10 ms DC TC = 25 oC 0.1 50 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss f = 1 MHz VGS = 0 V 1 10 100 400 TC = 25 oC 1000 100 50 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward BiasSafe Operating Area ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C SINGLE PULSE RTJC = 1.4 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD86252 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJC 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJC x RTJc + TC o RTJC = 1.4 C/W 0.01 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDD86252 Rev.C 5 www.fairchildsemi.com FDD86252 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. 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