FAIRCHILD FDB3860

FDB3860
N-Channel PowerTrench® MOSFET
100 V, 30 A, 37 mΩ
Features
General Description
„ Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A
„ 100% UIL tested
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench® process. This part is
tailored for low rDS(on) and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
„ RoHS Compliant
Applications
„ High performance trench technology for extremely low rDS(on)
„ DC-AC Conversion
„ Synchronous Rectifier
D
D
G
G
S
TO-263AB
S
FDB Series
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
ID
TJ, TSTG
±20
V
(Note 1a)
6.4
A
60
Single Pulse Avalanche Energy
PD
Units
V
30
-Pulsed
EAS
Ratings
100
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
96
71
(Note 1a)
Operating and Storage Junction Temperature Range
3.1
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.75
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB3860
Device
FDB3860
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
Package
TO-263AB
1
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench® MOSFET
March 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.5
V
100
V
104
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
2.5
3.8
-11
mV/°C
VGS = 10 V, ID = 5.9 A
31
37
VGS = 10 V, ID = 5.9 A, TJ = 125 °C
56
67
VDS = 10 V, ID = 5.9 A
18
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 50 V, VGS = 0 V,
f = 1 MHz
1310
1740
pF
100
130
pF
40
65
pF
Ω
1.7
Switching Characteristics
12
22
6
12
ns
ns
17
31
ns
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
3
10
ns
Qg
Total Gate Charge at 10 V
21
30
nC
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 50 V, ID = 5.9 A,
VGS = 10 V, RGEN = 6 Ω
VDD = 50 V, ID = 5.9 A
6.9
nC
5.4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 5.9 A
(Note 2)
0.8
1.3
IF = 5.9 A, di/dt = 100 A/µs
V
35
56
ns
37
60
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40 °C/W when mounted on a 1 in2 pad of 2 oz copper
b. 62.5 °C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 3 mH, IAS = 8 A, VDD = 100 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
2
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3.0
VGS = 10 V
VGS = 8.0 V
50
ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
VGS = 7.0 V
40
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
30
VGS = 6.5 V
20
10
VGS = 6.0 V
0
0
1
2
3
4
VGS = 6.0 V
2.5
VGS = 6.5 V
VGS = 7.0 V
2.0
VGS = 8.0 V
1.5
VGS = 10 V
1.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0.5
5
0
10
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
50
60
100
ID = 5.9 A
VGS = 10 V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
40
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
60
ID = 5.9 A
60
TJ = 125 oC
40
TJ = 25 oC
20
5
IS, REVERSE DRAIN CURRENT (A)
TJ = 150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
8
9
10
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
10
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
8
100
30
6
7
Figure 4. On-Resistance vs Gate to
Source Voltage
40
4
6
VGS, GATE TO SOURCE VOLTAGE (V)
VDS = 10 V
2
80
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
50
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
-50
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
30
ID, DRAIN CURRENT (A)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 5.9 A
VDD = 50 V
Ciss
8
VDD = 25 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 75 V
6
4
1000
Coss
100
Crss
f = 1 MHz
VGS = 0 V
2
10
0.1
0
0
5
10
15
20
25
1
Figure 7. Gate Charge Characteristics
35
8
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
100
Figure 8. Capacitance vs Drain
to Source Voltage
10
6
TJ = 25 oC
4
3
TJ = 100 oC
2
TJ = 125 oC
28
VGS = 10 V
21
14
7
o
RθJC = 1.75 C/W
1
0.01
0.1
1
10
0
25
100
50
100
125
150
o
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
5
10
10
P(PK), PEAK TRANSIENT POWER (W)
100
100 us
THIS AREA IS
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
o
RθJC = 1.75 C/W
TC = 25 oC
0.1
0.1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1
10
1 ms
10 ms
DC
100
300
SINGLE PULSE
RθJC = 1.75 oC/W
3
10
TC = 25 oC
2
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
VGS = 10 V
4
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
SINGLE PULSE
o
RθJC =1.75 C/W
0.001
-6
10
-5
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 62.5 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
5
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
Preliminary Datasheet
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I38
©2009 Fairchild Semiconductor Corporation
FDB3860 Rev.C
6
www.fairchildsemi.com
FDB3860 N-Channel PowerTrench® MOSFET
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