UniFET-IITM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0Ω Features Description • RDS(on) = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 10nC) • Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant D G G D S TO-220 FDP Series TO-220F FDPF Series (potting) GDS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDPF5N60NZ 600 Units V ±25 V - Continuous (TC = 25oC) 4.5 4.5* - Continuous (TC = 100oC) 2.7 2.7* ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR EAR dv/dt Peak Diode Recovery dv/dt - Pulsed (Note 1) 18 A 18* A (Note 2) 175 Avalanche Current (Note 1) 4.5 A Repetitive Avalanche Energy (Note 1) 10 mJ (Note 3) mJ 10 V/ns (TC = 25oC) 100 33 W - Derate above 25oC 0.8 0.27 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FDP5N60NZ -55 to +150 oC 300 oC *Dran current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP5N60NZ FDPF5N60NZ RθJC Thermal Resistance, Junction to Case 1.25 3.75 RθCS Thermal Resistance, Case to Sink Typ 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2011 Fairchild Semiconductor Corporation FDP5N60NZ / FDPF5N60NZ Rev. A 1 Units o C/W www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET March 2011 Device Marking FDP5N60NZ Device FDP5N60NZ Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF5N60NZ FDPF5N60NZ TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.6 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 VDS = 480V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 ID = 250μA, Referenced to 25oC μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 2.25A - 1.65 2.0 Ω gFS Forward Transconductance VDS = 20V, ID =2.25A - 5 - S VDS = 25V, VGS = 0V f = 1MHz - 450 600 pF - 50 65 pF - 5 7.5 pF - 10 13 nC - 2.5 - nC - 4 - nC - 15 40 ns - 20 50 ns - 35 80 ns - 20 50 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 480V, ID = 4.5A VGS = 10V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 4.5A RG = 25Ω Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 4.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 18 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 4.5A - - 1.4 V trr Reverse Recovery Time - 230 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 4.5A dIF/dt = 100A/μs - 0.9 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 17.3mH, IAS = 4.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 4.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse test: Pulse width ≤ 300μs,Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP5N60NZ / FDPF5N60NZ Rev. A 2 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 10 ID, Drain Current[A] ID, Drain Current[A] 10 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 2 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 40 IS, Reverse Drain Current [A] 3 VGS = 10V 2 VGS = 20V 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 1 0 2 4 6 ID, Drain Current [A] 8 0.1 0.2 10 Figure 5. Capacitance Characteristics 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 10 VGS, Gate-Source Voltage [V] 1000 Ciss Capacitances [pF] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 4 RDS(ON) [Ω], Drain-Source On-Resistance 4 6 8 VGS, Gate-Source Voltage[V] 100 Coss Crss 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 -1 10 *Note: 1. VGS = 0V 2. f = 1MHz 6 4 2 *Note: ID = 4.5A 0 1 10 VDS, Drain-Source Voltage [V] FDP5N60NZ / FDPF5N60NZ Rev. A VDS = 120V VDS = 300V VDS = 480V 8 30 3 0 2 4 6 8 Qg, Total Gate Charge [nC] 10 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 0.88 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.4 2.0 1.6 1.2 0.4 -80 160 Figure 9. Maximum Safe Operating Area -FDP5N60NZ *Notes: 1. VGS = 10V 2. ID = 2.25A 0.8 -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Safe Operating Area -FDPF5N60NZ 50 30 10 10 100μs 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 30μs 100μs ID, Drain Current [A] ID, Drain Current [A] 30μs 1ms 1 Operation in This Area is Limited by R DS(on) 0.1 *Notes: *Notes: o o 1. TC = 25 C 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1000 Figure 11. Maximum Drain Current vs. Case Temperature 8 IAS, AVALANCHE CURRENT(A) 4 ID, Drain Current [A] 1 10 100 1000 3000 VDS, Drain-Source Voltage [V] Figure 12. Unclamped Inductive Switching Capability 5 3 2 1 0 25 DC o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 10ms 50 75 100 125 o TC, Case Temperature [ C] FDP5N60NZ / FDPF5N60NZ Rev. A TJ = 25oC TJ = 125oC 1 0.01 150 0.1 1 2 tAV, TIME IN AVALANCHE(ms) 4 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Typical Performance Characteristics (Continued) FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve -FDP5N60NZ 2 Thermal Response [ZθJC] 1 0.5 0.2 PDM 0.1 t1 0.1 t2 0.05 *Notes: 0.02 o 1. ZθJC(t) = 1.25 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 Single pulse 0.01 -5 10 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] -1 10 1 Figure 14. Transient Thermal Response Curve -FDPF5N60NZ Thermal Response [ZθJC] 10 0.5 1 0.2 PDM 0.1 t1 0.05 t2 0.1 0.02 *Notes: 0.01 o 1. ZθJC(t) = 3.75 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDP5N60NZ / FDPF5N60NZ Rev. A -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 2 10 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N60NZ / FDPF5N60NZ Rev. A 6 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP5N60NZ / FDPF5N60NZ Rev. A 7 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Mechanical Dimensions TO-220 FDP5N60NZ / FDPF5N60NZ Rev. A 8 www.fairchildsemi.com FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET Package Dimensions TO-220F * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDP5N60NZ / FDPF5N60NZ Rev. A 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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