PD54003L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 20 dB gain @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION PowerFLAT™(5x5) • SUPPLIED IN TAPE & REEL OF 3K UNITS ORDER CODE PD54003L BRANDING 54003 PIN CONNECTION DESCRIPTION The PD54003L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54003L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PD54003L’s superior linearity performance makes it an ideal solution for portable radio. TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Value Unit V(BR)DSS Symbol Drain-Source Voltage 25 V VGS Gate-Source Voltage -0.5 to +15 V 4 A ID PDISS Tj TSTG Parameter Drain Current Power Dissipation (@ Tc = 70°C) 19.5 W Max. Operating Junction Temperature 150 °C -65 to +150 °C 4.1 °C/W Storage Temperature THERMAL DATA Rth(j-c) May, 29 2003 Junction -Case Thermal Resistance 1/8 PD54003L ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol Test Conditions Min. Typ. Max. Unit 1 µA IDSS VGS = 0 V VDS = 25 V IGSS VGS = 20 V VDS = 0 V VGS(Q) VDS = 10 V ID = 50 mA VDS(ON) VGS = 10 V ID = 0.5 A 0.13 gFS VDS = 10 V ID = 3.2 A TBD mho 2.0 1 µA 5.0 V 0.16 V CISS VGS = 0 V VDS = 7.5 V f = 1 MHz 54 pF COSS VGS = 0 V VDS = 7.5 V f = 1 MHz 43 pF CRSS VGS = 0 V VDS = 7.5 V f = 1 MHz 4.0 pF DYNAMIC Symbol Test Conditions Min. Typ. Max. POUT VDD = 7.5 V IDQ = 50 mA f = 500 MHz 3 GPS VDD = 7.5 V IDQ = 50 mA POUT = 3 W f = 500 MHz 16 20 dB ηD VDD = 7.5 V IDQ = 50 mA POUT = 3 W f = 500 MHz 50 55 % VDD = 9.5 V IDQ = 50 mA ALL PHASE ANGLES POUT = 3 W f = 500 MHz Load mismatch W 20:1 VSWR D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S SC13140 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 2 Machine Model M3 MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B 2/8 Unit Rating MSL 3 PD54003L TYPICAL PERFORMANCE Output Power Vs Input Power Capacitance Vs Supply Voltage 5 1000 4 100 f = 500 MHz Pout (W) C (pF) Ciss Coss 3 2 10 Crss 1 Vds = 7.5 V Idq= 50 mA 1 0 0 2 4 6 8 Vds (V) 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 55 60 Pin (mW) Power Gain Vs Output Power Efficiency Vs Output Power 26 80 24 70 22 20 f = 500 MHz 50 Nd (%) 16 Gp (dB) f = 500 MHz 60 18 14 12 10 40 30 8 20 6 4 Vds = 7.5 V Idq = 50 mA 10 Vds = 7.5 V Idq = 50 mA 2 0 0 0 1 2 3 4 5 Pout (W) 0 1 2 3 4 5 Pout (W) Output Power Vs Bias Current 4 Pout (W) 3 f = 500 MHz 2 1 Vds = 7.5 V Pin= 15 dBm 0 0 50 100 150 200 250 300 350 400 450 500 Idq (mA) 3/8 PD54003L TYPICAL PERFORMANCE Output Power Vs Supply Voltage Efficiency Vs Bias Current 8 70 7 60 Pout (W) Nd (%) 6 f = 500 MHz 50 40 5 4 3 30 2 Idq = 50 mA Pin = 15 dBm f = 500 MHz 20 1 Vds = 7.5 V Pin= 15 dBm 10 0 0 50 100 150 200 250 Idq (mA) 300 350 400 450 500 4 Pin = 15 dBm Vdd = 7.5 V f = 500 MHz Pout (W) 3 2 1 0 4/8 0.5 1.0 1.5 Vgs (V) 6 7 8 Vds (V) Output Power Vs Gate-Source Voltage 0.0 5 2.0 2.5 3.0 9 10 PD54003L TYPICAL PERFORMANCE (BROADBAND) Power Gain Vs Frequency Efficiency Vs Frequency 70 20 18 60 16 50 12 Nd (%) Gp (dB) 14 10 40 30 8 6 20 4 Vds = 7.5 V Idq = 50 mA Pout= 3 W 2 Vds = 7.5 V Iqd = 50 mA Pout = 3 W 10 0 0 460 470 480 490 500 f (MHz) 510 520 530 540 460 470 480 490 500 f (MHz) 510 520 530 540 Return Loss Vs Frequency 0 RL (dB) -5 -10 -15 -20 Vds = 7.5 V Idq = 50 mA Pout = 3 W -25 460 470 480 490 500 f (MHz) 510 520 530 540 5/8 PD54003L TAPE & REEL DIMENSIONS mm 6/8 MIN. TYP. MAX Ao 5.15 5.25 5.35 Bo 5.15 5.25 5.35 Ko 1.0 1.1 1.2 PD54003L PowerFLAT™ MECHANICAL DATA DIM. mm MIN. Inch TYP. MAX A 0.90 A1 0.02 A3 MIN. TYP. MAX 1.00 0.035 0.039 0.05 0.001 0.002 0.24 0.009 AA 0.15 0.25 0.35 0.006 0.01 0.014 b 0.43 0.51 0.58 0.017 0.020 0.023 c 0.64 0.71 0.79 0.025 0.028 0.031 D 5.00 0.197 d 0.30 0.011 E E2 5.00 2.57 0.197 0.101 2.49 2.64 0.098 e 1.27 0.050 f g 3.37 0.74 0.132 0.03 h 0.21 0.008 0.104 7/8 PD54003L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8