PD54008L RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • BROADBAND PERFORMANCES POUT = 8 W WITH 15 dB GAIN @ 500 MHz • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS DESCRIPTION The PD54008L is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD54008L boasts the excellent gain, linearity and reliability of STH1LV latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. PD54008L’s superior linearity performance makes it an ideal solution for portable radio. PowerFLAT™(5x5) ORDER CODE PD54008L BRANDING 54008 PIN CONNECTION TOP VIEW ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Value Unit V(BR)DSS Symbol Drain-Source Voltage 25 V VGS Gate-Source Voltage -0.5 to +15 V 5 A ID PDISS Tj TSTG Parameter Drain Current Power Dissipation (@ Tc = 70°C) 26.7 W Max. Operating Junction Temperature 150 °C -65 to +150 °C 3 °C/W Storage Temperature THERMAL DATA Rth(j-c) May, 28 2003 Junction -Case Thermal Resistance 1/8 PD54008L ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol Test Conditions Min. IDSS VGS = 0 V IGSS VGS = 5 V VGS(Q) VDS = 10 V ID = 50 mA VDS(ON) VGS = 10 V ID = 0.5 A CISS VGS = 0 V VDS = 7.5 V f = 1 MHz COSS VGS = 0 V VDS = 7.5 V CRSS VGS = 0 V VDS = 7.5 V Typ. Max. Unit 1 µA 1 µA 5.0 V VDS = 25 V VDS = 0 V 2.0 0.09 V 80 pF f = 1 MHz 60 pF f = 1 MHz 6.6 pF DYNAMIC Symbol Test Conditions Min. P1dB VDD = 7.5 V IDQ = 200 mA GPS VDD = 7.5 V IDQ = 200 mA POUT = 8 W ηD VDD = 7.5 V IDQ = 200 mA POUT = 8 W VDD = 9.5 V IDQ = 200 mA ALL PHASE ANGLES POUT = 8 W f = 500 MHz Load mismatch f = 500 MHz Typ. Max. Unit 8 W f = 500 MHz 15 dB f = 500 MHz 50 % 20:1 VSWR IMPEDANCE DATA (1) D ZDL Typical Input Impedance Typical Drain Load Impedance FREQ. (MHz) ZIN (Ω) ZDL (Ω) 480 1.12 - j 2.02 2.01 + j 0.13 500 1.3 - j 2.01 1.84 + j 0.7 520 1.66 - j 2.55 1.66 + j 1.51 (1) In Broadband amplifier G Zin S ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 2 Machine Model M3 MOISTURE SENSITIVITY LEVEL Test Methodology J-STD-020B 2/8 Rating MSL 3 PD54008L TYPICAL PERFORMANCE Power Gain Vs Output Power Efficiency Vs Output Power 20 80 Idq = 200 mA 19 70 18 60 17 Idq = 150 mA 50 Nd (%) Gp (dB) 16 Idq = 100 mA 15 14 40 30 13 20 12 f = 500 MHz Vds = 7.5 V 11 Idq = 200 mA f = 500 MHz Vds = 7.5 V 10 10 0 0 1 2 3 4 5 Pout (W) 6 7 8 9 10 0 1 2 3 4 5 Pout (W) 6 7 8 9 10 Capacitance Vs Supply Voltage Return Loss Vs Output Power 1000 0 f = 1 MHz -5 Ciss 100 Coss C (pF) RL (dB) -10 -15 -20 10 Crss Idq = 200 mA f = 500 MHz Vds = 7.5 V -25 -30 1 0 1 2 3 4 5 Pout (W) 6 7 8 9 10 0 1 2 3 4 5 Vds (V) 6 7 8 9 3/8 PD54008L Efficiency Vs Frequency (BROADBAND ) 14 70 12 60 10 50 8 40 Nd (%) Gp (dB) TYPICAL PERFORMANCE Power Gain Vs Frequency (BROADBAND ) 6 30 4 20 2 10 Idq = 150 mA Pin = 26 dBm Idq = 150 mA Pin = 26 dBm 0 470 480 490 500 510 520 530 Return Loss Vs Frequency (BROADBAND) 0 -4 RL (dB) -8 -12 -16 Idq = 150 mA Pin = 26 dBm 480 490 500 f (MHz) 4/8 480 490 500 f (MHz) f (MHz) -20 470 0 470 510 520 530 510 520 530 PD54008L TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION B1, B2 Ferrite bead C1, C16 300 pF, 100 mil ATC C2, C3, C4, C13,C14 1 -:- 20 pF Trimmer cap - JOHANSON C15 0.8 -:- 10 pF Trimmer cap - JOHANSON C5 36 pF, 100 mil ATC C6 51 pF, 100 mil ATC C7 62 pF, 100 mil ATC C8, C17 150 pF, 100 mil CHIP CAP C9 1 nF, 100 mil CHIP CAP C10, C18 1000 pF, 100 mil CHIP CAP C11, C19 C12, C20 0.1 nF, 100 mil CHIP CAP 10 µ F 50 V Electrolytic Capacitor C21 15 pF, 100 mil ATC L R3 43nH, Coilcraft 33 K Ω , 1W CHIP Resistor 1 K Ω , 1W CHIP Resistor R4 15 Ω , 1W CHIP Resistor Z1 0.49" X 0.080" MICROSTRIP Z2 1.024" X 0.080" MICROSTRIP Z3 0.079" X 0.080" MICROSTRIP Z4 0.24" X 0.223" Z5 0.079" X 0.223" MICROSTRIP Z6 0.138" X 0.223" MICROSTRIP Z7 0.259" X 0.223" MICROSTRIP Z8 0.079" X 0.080" MICROSTRIP R1 MICROSTRIP Z9 0.413" X 0.080" MICROSTRIP Z10 0.756" X 0.080" MICROSTRIP Z11 0.61" X 0.080" MICROSTRIP N1, N2 Type N Flange Mount ROGER, ULTRA LAM 2000 THK 0.030", ε r = 2.55 2oz. ED cu SIDES Board 5/8 PD54008L TAPE & REEL DIMENSIONS mm 6/8 MIN. TYP. MAX Ao 5.15 5.25 5.35 Bo 5.15 5.25 5.35 Ko 1.0 1.1 1.2 PD54008L PowerFLAT™ MECHANICAL DATA DIM. mm MIN. Inch TYP. MAX A 0.90 A1 0.02 A3 MIN. TYP. MAX 1.00 0.035 0.039 0.05 0.001 0.002 0.24 0.009 AA 0.15 0.25 0.35 0.006 0.01 0.014 b 0.43 0.51 0.58 0.017 0.020 0.023 c 0.64 0.71 0.79 0.025 0.028 0.031 D 5.00 0.197 d 0.30 0.011 E E2 5.00 2.57 0.197 0.101 2.49 2.64 0.098 e 1.27 0.050 f g 3.37 0.74 0.132 0.03 h 0.21 0.008 0.104 7/8 PD54008L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8