N-Channel Dual CoolTM PowerTrench® SyncFETTM 30 V, 49 A, 2.6 mΩ Features Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Top Side Cooling PQFN package Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Pin 1 S S S G D D D D Power 56 Top D 5 4 G D 6 3 D 7 2 S D 8 1 S S Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C Ratings 30 Units V ±20 V 49 140 (Note 1a) -Pulsed 29 A 200 EAS Single Pulse Avalanche Energy (Note 3) 112 mJ dv/dt Peak Diode Recovery dv/dt (Note 5) 2.3 V/ns (Note 1a) 3.3 PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 78 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 3.5 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 °C/W Package Marking and Ordering Information Device Marking 3008S Device FDMS3008SDC ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C Package Dual CoolTM Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM August 2011 FDMS3008SDC Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 13 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.9 -5 mV/°C VGS = 10 V, ID = 28 A 1.8 2.6 VGS = 4.5 V, ID = 22 A 2.7 3.3 VGS = 10 V, ID = 28 A, TJ = 125°C 2.4 3.6 VDS = 5 V, ID = 28 A 144 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1MHz 3400 4520 pF 1115 1485 pF 80 120 pF Ω 0.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time 15 27 VDD = 15 V, ID = 28 A, VGS = 10 V, RGEN = 6 Ω 4.7 10 ns ns 33 53 ns tf Fall Time 3 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 46 64 nC VGS = 0 V to 4.5 V VDD = 15 V, ID = 28 A 21 29 nC 9.6 nC 4.3 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C VGS = 0 V, IS = 2 A (Note 2) 0.4 0.8 VGS = 0 V, IS = 28 A (Note 2) 0.8 1.2 IF = 28 A, di/dt = 300 A/μs 2 V 32 51 ns 39 62 nC www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 3.5 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.6 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 °C/W NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 81 °C/W when mounted on a minimum pad of 2 oz copper a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 112 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 33.4 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 5. ISD ≤ 28 A, di/dt ≤ 210 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC. ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 3 www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Thermal Characteristics 200 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V 150 VGS = 4.5 V 100 VGS = 4 V 50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 0 0.0 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3 VGS = 3.5 V 2 VGS = 4.5 V 1 VGS = 6 V 0 40 80 120 160 200 ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 10 ID = 28 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V 0 2.0 Figure 1. On Region Characteristics IS, REVERSE DRAIN CURRENT (A) TJ = 125 oC 100 TJ = 25 oC 50 TJ = -55 oC 3.0 3.5 6 4 TJ = 125 oC 2 TJ = 25 oC 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 150 2.5 ID = 28 A VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 2.0 8 2 200 VDS = 5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 4 V 200 100 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4.0 VGS = 0 V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 4 1.2 www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 5000 ID = 28 A VDD = 15 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 10 V 6 VDD = 20 V 4 2 1000 Coss Crss 100 0 0 10 20 30 40 f = 1 MHz VGS = 0 V 40 0.1 50 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 150 40 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) o RθJC = 1.6 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.01 0.1 1 10 120 VGS = 10 V 90 VGS = 4.5 V 60 30 Limited by Package 0 25 100 50 150 2000 P(PK), PEAK TRANSIENT POWER (W) 100 ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 500 100 μs 1 ms 10 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 ms 100 ms THIS AREA IS LIMITED BY rDS(on) 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 81 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100200 100 10 SINGLE PULSE RθJA = 81 oC/W TA = 25 oC 1 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 1000 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 81 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 6 www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS3008SDC. 0.01 IDSS, REVERSE LEAKAGE CURRENT (A) 30 25 CURRENT (A) 20 di/dt = 300 A/μs 15 10 5 0 -5 0 50 100 150 200 250 300 0.001 TJ = 100 oC 0.0001 0.00001 TJ = 25 oC 0.000001 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 15. SyncFET body diode reverses leakage versus drain-source voltage Figure 14. FDMS3008SDC SyncFET body diode reverse recovery characteristic ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C TJ = 125 oC 7 www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 8 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 ©2011 Fairchild Semiconductor Corporation FDMS3008SDC Rev.C 9 www.fairchildsemi.com FDMS3008SDC N-Channel Dual CoolTM PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PDP SPM™ The Power Franchise® FlashWriter® * AccuPower™ FPS™ Power-SPM™ The Right Technology for Your Success™ ® Auto-SPM™ F-PFS™ PowerTrench® AX-CAP™* FRFET® PowerXS™ ® SM BitSiC Global Power Resource Programmable Active Droop™ TinyBoost™ Build it Now™ Green FPS™ QFET® TinyBuck™ Green FPS™ e-Series™ QS™ CorePLUS™ TinyCalc™ Gmax™ Quiet Series™ CorePOWER™ TinyLogic® GTO™ RapidConfigure™ CROSSVOLT™ TINYOPTO™ CTL™ IntelliMAX™ ™ TinyPower™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ Saving our world, 1mW/W/kW at a time™ DEUXPEED® MegaBuck™ TinyWire™ Dual Cool™ SignalWise™ MICROCOUPLER™ TranSiC® EcoSPARK® SmartMax™ MicroFET™ TriFault Detect™ EfficentMax™ SMART START™ MicroPak™ TRUECURRENT®* ESBC™ SPM® MicroPak2™ μSerDes™ STEALTH™ MillerDrive™ ® SuperFET® MotionMax™ SuperSOT™-3 Motion-SPM™ Fairchild® UHC® SuperSOT™-6 mWSaver™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 OptiHiT™ FACT Quiet Series™ UniFET™ SupreMOS® OPTOLOGIC® FACT® VCX™ OPTOPLANAR® SyncFET™ FAST® ® VisualMax™ Sync-Lock™ FastvCore™ XS™ ®* FETBench™