FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ Features General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total gate charge and on-state resistance. An independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. Max rDS(on) = 299 mΩ at VGS = 4.5 V, ID = 1.6 A Max rDS(on) = 410 mΩ at VGS = 2.5 V, ID = 1.3 A Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Free from halogenated compounds and antimony oxides The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. HBM ESD protection level > 1600V (Note3) RoHS Compliant Applications Boost Functions D NC A D Pin1 K S G K TOP BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25°C (Note 1a) -Pulsed PD Ratings 30 Units V ±12 V 1.6 4.5 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 1.1 (Note 1a) 0.5 A W VRRM Schottky Repetitive Peak Reverse Voltage 28 V IO Schottky Average Forward Current 1 A TJ, TSTG Operating and Storage Junction Temperature Range (Note 4) -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 110 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 234 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 95 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 210 °C/W Package Marking and Ordering Information Device Marking 1T Device FDFME3N311ZT ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 Package MicroFET 1.6x1.6 Thin 1 Reel Size 7’’ Tape Width 8mm Quantity 5000 units www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode September 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±10 µA 1.5 V 30 V 25 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C VGS = 4.5 V, ID = 1.6 A 235 299 rDS(on) Drain to Source On Resistance VGS = 2.5 V, ID = 1.3 A 296 410 VGS = 4.5 V, ID = 1.6 A,TJ = 150 °C 327 420 VDS = 5 V, ID = 1.6 A 2.8 VDS = 15 V, VGS = 0 V, f = 1 MHz 55 75 pF 15 20 pF 7 10 pF gFS Forward Transconductance 0.5 1 -3 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 7.5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 1.6 A VGS = 4.5 V, RGEN = 6 Ω VGS = 4.5 V VDD = 15 V ID = 1.6 A 6 12 8 16 ns ns 22 35 ns 1.4 2.8 ns 1 1.4 nC 0.2 nC 0.3 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 1.6 VGS = 0 V, IS = 0.9 A (Note 2) IF = 1.6 A, di/dt = 100 A/µs A 0.9 1.2 V 12 22 ns 3.1 10 nC Schottky Diode Characteristics IR Reverse Leakage VR = 28 V TJ = 25 °C TJ = 85 °C 15 100 µA 0.46 4.7 mA VF Forward Voltage IF = 1 A TJ = 25 °C TJ = 85 °C 0.47 0.57 0.45 VF Forward Voltage IF = 500 mA TJ = 25 °C TJ = 85 °C ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 2 0.38 0.33 0.48 V V www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) MOSFET RθJA = 110 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. (b) MOSFET RθJA = 234 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) Schottky RθJA = 95 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062" thick PCB. (d) Schottky RθJA = 210 °C/W when mounted on a minimum pad of 2 oz copper. For dual operation. a. 110 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 234 °C/W when mounted on a minimum pad of 2 oz copper. d. 210 °C/W when mounted on a minimum pad of 2 oz copper. c. 95 °C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. 4. Rating is applicable to MOSFET only. ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 3 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Electrical Characteristics 2.5 VGS = 6 V VGS = 4.5 V VGS = 3.5 V 3 VGS = 3 V 2 VGS = 2.5 V 1 VGS = 1.8 V 0 0 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1 2 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 4 2.0 VGS = 1.8 V VGS = 2.5 V 1.5 1.0 VGS = 3 V VGS = 3.5 V VGS = 4.5 V 0.5 3 0 1 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.0 0.8 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 800 ID = 1.6 A 600 TJ = 125 oC 400 200 TJ = 25 oC 0 1.5 150 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 4 10 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 4 1000 ID = 1.6 A VGS = 4.5 V -25 3 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0.6 -50 2 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.6 VGS = 6 V 3 VDS = 5 V 2 TJ = 150 oC 1 TJ = 25 oC TJ = -55 oC 0 0 1 2 3 VGS = 0 V TJ = 150 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.2 4 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 4 1.2 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted 100 ID = 1.6 A Ciss VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 3.0 VDD = 15 V VDD = 20 V 1.5 Coss Crss 10 f = 1 MHz VGS = 0 V 0.0 0.0 0.2 0.4 0.6 0.8 1.0 4 0.1 1.2 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 10 -2 10 Ig, GATE LEAKAGE CURRENT (A) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 100 us 1 1 ms 0.1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s 10 s DC SINGLE PULSE TJ = MAX RATED 0.01 o RθJA = 234 C/W TA = 25 oC 0.001 0.1 1 10 VDS = 0 V -3 10 -4 10 TJ = 150 oC -5 10 -6 10 -7 10 TJ = 25 oC -8 10 -9 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 0 5 10 15 20 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Gate Leakage Current vs Gate to Source Voltage 5 IF, FORWARD CURRENT (A) IR, REVERSE LEAKAGE CURRENT (mA) -2 10 TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (V) TJ = 25 oC 0.01 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (mV) Figure 11. Schottky Diode Reverse Current ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 TJ = 125 oC 0.1 0.001 0.0 -6 10 1 Figure 12. Schottky Diode Forward Voltage 5 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 100 10 SINGLE PULSE o RθJA = 234 C/W o TA = 25 C 1 0.1 -4 10 -3 10 -2 -1 10 10 1 100 10 1000 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 234 C/W 0.01 -4 10 -3 10 -2 10 -1 0 10 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 6 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Typical Characteristics TJ = 25°C unless otherwise noted FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 ©2009 Fairchild Semiconductor Corporation FDFME3N311ZT Rev.C2 8 www.fairchildsemi.com FDFME3N311ZT Integrated N-Channel PowerTrench® MOSFET and Schottky Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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