Dual N-Channel PowerTrench® MOSFET 30 V, 3.8 A, 68 mΩ Features General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Max rDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A Max rDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A Max rDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compliant PIN 1 S1 G1 D1 D1 Top D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D2 G2 S2 Bottom MicroFET 2x2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Ratings 30 Units V ±12 V 3.8 16 Power Dissipation (Note 1a) 1.5 Power Dissipation (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance for Single Operation, Junction to Ambient (Note 1a) 86 Thermal Resistance for Single Operation, Junction to Ambient (Note 1b) 173 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1c) 69 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1d) 151 Thermal Resistance for Single Operation, Junction to Ambient (Note 1e) 160 Thermal Resistance for Dual Operation, Junction to Ambient (Note 1f) 133 °C/W Package Marking and Ordering Information Device Marking 328 Device FDMA3028N ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 Package MicroFET 2X2 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDMA3028N Dual N-Channel PowerTrench® MOSFET June 2011 FDMA3028N Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±100 nA 1.5 V 30 V 23 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -3 rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 0.6 0.9 mV/°C VGS = 4.5 V, ID = 3.8 A 46 68 VGS = 2.5 V, ID = 3.4 A 56 88 VGS = 1.8 V, ID = 2.9 A 80 123 VGS = 4.5 V, ID = 3.8 A, TJ = 125 °C 72 108 VDS = 5 V, ID = 3.8 A 15 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 282 375 pF 40 55 pF 29 45 pF Ω 2.4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 3.8 A, VGS = 4.5 V, RGEN = 6 Ω VDD = 15 V, ID = 3.8 A VGS = 5 V 5.3 11 ns 3 10 ns 15 27 ns 2.5 10 ns 3.7 5.2 nC 0.4 nC 1 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 VGS = 0 V, IS = 1.3 A IF = 3.8 A, di/dt = 100 A/μs 2 (Note 2) 0.7 1.2 V 12 22 ns 3.3 10 nC www.fairchildsemi.com FDMA3028N Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RθJA (d) RθJA (e) RθJA (f) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. = 160 oC/W when mounted on a 30mm2 pad of 2 oz copper. For single operation. = 133 oC/W when mounted on a 30mm2 pad of 2 oz copper. For dual operation. a. 86 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 173 °C/W when mounted on a minimum pad of 2 oz copper c. 69 °C/W when mounted on a 1 in2 pad of 2 oz copper d. 151 °C/W when mounted on a minimum pad of 2 oz copper e. 160 °C/W when mounted on 30mm2 pad of 2 oz copper f. 133 °C/W when mounted on 30mm2 of 2 oz copper 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 3 www.fairchildsemi.com FDMA3028N Dual N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 VGS = 4.5 V ID, DRAIN CURRENT (A) VGS = 3.5 V 12 VGS = 3 V VGS =2.5 V 8 4 VGS = 1.8 V 0 0.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 1.5 0.5 2.0 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0 25 50 75 16 ID = 3.8 A TJ = 125 oC 100 50 TJ = 25 oC IS, REVERSE DRAIN CURRENT (A) 12 VDS = 5 V 8 TJ = 150 oC 4 TJ = 25 oC TJ = -55 oC 2 2.5 3.0 3.5 4.0 20 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 0.001 0.0 3 VGS = 0 V TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 4.5 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 16 ID, DRAIN CURRENT (A) 12 150 0 1.5 100 125 150 Figure 3. Normalized On Resistance vs Junction Temperature 0 8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX TJ, JUNCTION TEMPERATURE (oC) 0 4 200 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 0 VGS = 4.5 V VGS = 3.5 V Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 3.8 A VGS = 4.5 V -25 VGS = 3 V ID, DRAIN CURRENT(A) 1.6 -50 VGS = 2.5 V 1.0 Figure 1. On Region Characteristics 0.6 -75 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 1.8 V 4 1.2 www.fairchildsemi.com FDMA3028N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE (V) 5 500 ID = 3.8 A Ciss VDD = 10 V CAPACITANCE (pF) 4 VDD = 15 V 3 VDD = 20 V 2 100 Coss 1 Crss f = 1 MHz VGS = 0 V 0 0 1 2 3 10 0.1 4 1 Figure 7. Gate Charge Characteristics 100 P(PK), PEAK TRANSIENT POWER (W) 10 ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance vs Drain to Source Voltage 20 100 μs 1 1 ms THIS AREA IS LIMITED BY rDS(on) 0.1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s 10 s DC RθJA = 173 oC/W TA = 25 oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 173 oC/W TA = 25 oC 10 1 0.5 -4 10 -3 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area 2 -2 10 Figure 10. Single Pulse Maximum Power Dissipation DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 173 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 5 www.fairchildsemi.com FDMA3028N Dual N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMA3028N Dual N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I54 ©2011 Fairchild Semiconductor Corporation FDMA3028N Rev.C2 7 www.fairchildsemi.com FDMA3028N Dual N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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