FAIRCHILD FDMA3028N

Dual N-Channel PowerTrench® MOSFET
30 V, 3.8 A, 68 mΩ
Features
General Description
This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other
ultra-portable applications. It features two independent
N-Channel MOSFETs with low on-state resistance for minimum
conduction losses. The MicroFET 2x2 package offers
exceptional thermal performance for its physical size and is well
suited to linear mode applications.
„ Max rDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
„ Max rDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
„ Max rDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ RoHS Compliant
PIN 1
S1
G1
D1
D1
Top
D2
S1 1
6
D1
G1
2
5
G2
D2 3
4
S2
D2
G2 S2
Bottom
MicroFET 2x2
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
30
Units
V
±12
V
3.8
16
Power Dissipation
(Note 1a)
1.5
Power Dissipation
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1a)
86
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1b)
173
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1c)
69
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1d)
151
Thermal Resistance for Single Operation, Junction to Ambient
(Note 1e)
160
Thermal Resistance for Dual Operation, Junction to Ambient
(Note 1f)
133
°C/W
Package Marking and Ordering Information
Device Marking
328
Device
FDMA3028N
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
Package
MicroFET 2X2
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDMA3028N Dual N-Channel PowerTrench® MOSFET
June 2011
FDMA3028N
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±12 V, VDS = 0 V
±100
nA
1.5
V
30
V
23
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-3
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
0.6
0.9
mV/°C
VGS = 4.5 V, ID = 3.8 A
46
68
VGS = 2.5 V, ID = 3.4 A
56
88
VGS = 1.8 V, ID = 2.9 A
80
123
VGS = 4.5 V, ID = 3.8 A, TJ = 125 °C
72
108
VDS = 5 V, ID = 3.8 A
15
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
282
375
pF
40
55
pF
29
45
pF
Ω
2.4
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 3.8 A,
VGS = 4.5 V, RGEN = 6 Ω
VDD = 15 V, ID = 3.8 A
VGS = 5 V
5.3
11
ns
3
10
ns
15
27
ns
2.5
10
ns
3.7
5.2
nC
0.4
nC
1
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
VGS = 0 V, IS = 1.3 A
IF = 3.8 A, di/dt = 100 A/μs
2
(Note 2)
0.7
1.2
V
12
22
ns
3.3
10
nC
www.fairchildsemi.com
FDMA3028N Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Notes:
1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
(b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation.
(c) RθJA
(d) RθJA
(e) RθJA
(f) RθJA
= 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation.
= 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation.
= 160 oC/W when mounted on a 30mm2 pad of 2 oz copper. For single operation.
= 133 oC/W when mounted on a 30mm2 pad of 2 oz copper. For dual operation.
a. 86 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 173 °C/W when mounted on
a minimum pad of 2 oz copper
c. 69 °C/W when mounted on
a 1 in2 pad of 2 oz copper
d. 151 °C/W when mounted on
a minimum pad of 2 oz copper
e. 160 °C/W when mounted on
30mm2 pad of 2 oz copper
f. 133 °C/W when mounted on
30mm2 of 2 oz copper
2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0%
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
3
www.fairchildsemi.com
FDMA3028N Dual N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
2.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
16
VGS = 4.5 V
ID, DRAIN CURRENT (A)
VGS = 3.5 V
12
VGS = 3 V
VGS =2.5 V
8
4
VGS = 1.8 V
0
0.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
1.5
0.5
2.0
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0
25
50
75
16
ID = 3.8 A
TJ = 125 oC
100
50
TJ = 25 oC
IS, REVERSE DRAIN CURRENT (A)
12
VDS = 5 V
8
TJ = 150 oC
4
TJ = 25 oC
TJ = -55 oC
2
2.5
3.0
3.5
4.0
20
10
1
TJ = 150 oC
TJ = 25 oC
0.1
0.01
0.001
0.0
3
VGS = 0 V
TJ = -55 oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
4.5
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1
2.0
VGS, GATE TO SOURCE VOLTAGE (V)
16
ID, DRAIN CURRENT (A)
12
150
0
1.5
100 125 150
Figure 3. Normalized On Resistance
vs Junction Temperature
0
8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ, JUNCTION TEMPERATURE (oC)
0
4
200
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
0
VGS = 4.5 V
VGS = 3.5 V
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
ID = 3.8 A
VGS = 4.5 V
-25
VGS = 3 V
ID, DRAIN CURRENT(A)
1.6
-50
VGS = 2.5 V
1.0
Figure 1. On Region Characteristics
0.6
-75
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 1.8 V
4
1.2
www.fairchildsemi.com
FDMA3028N Dual N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE (V)
5
500
ID = 3.8 A
Ciss
VDD = 10 V
CAPACITANCE (pF)
4
VDD = 15 V
3
VDD = 20 V
2
100
Coss
1
Crss
f = 1 MHz
VGS = 0 V
0
0
1
2
3
10
0.1
4
1
Figure 7. Gate Charge Characteristics
100
P(PK), PEAK TRANSIENT POWER (W)
10
ID, DRAIN CURRENT (A)
30
Figure 8. Capacitance vs Drain
to Source Voltage
20
100 μs
1
1 ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
DC
RθJA = 173 oC/W
TA = 25 oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 173 oC/W
TA = 25 oC
10
1
0.5 -4
10
-3
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
2
-2
10
Figure 10. Single Pulse Maximum
Power Dissipation
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 173 C/W
0.01
0.005 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
5
www.fairchildsemi.com
FDMA3028N Dual N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMA3028N Dual N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
6
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
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effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I54
©2011 Fairchild Semiconductor Corporation
FDMA3028N Rev.C2
7
www.fairchildsemi.com
FDMA3028N Dual N-Channel PowerTrench® MOSFET
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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