P-Channel PowerTrench® MOSFET -30 V, -18 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Extended VGSS range (-25 V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability HBM ESD protection level >7 kV typical (Note 4) Applications 100% UIL tested High side in DC-DC Buck Converters Termination is Lead-free and RoHS Compliant Notebook battery power management Load switch in Notebook Bottom Top S D D D Pin 1 S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±25 V -18 -35 (Note 1a) -Pulsed -9.0 A -50 Single Pulse Avalanche Energy EAS Ratings -30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 18 39 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3.2 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS4435BZ Device FDMS4435BZ ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS4435BZ P-Channel Power Trench® MOSFET March 2011 FDMS4435BZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±10 μA -3.0 V -30 V -23 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 6 VGS = -10 V, ID = -9.0 A 15 20 Static Drain to Source On Resistance VGS = -4.5 V, ID = -6.5 A 22 37 VGS = -10 V, ID = -9.0 A TJ = 125 °C 21 28 VDS = -5 V, ID = -9.0 A 25 rDS(on) gFS Forward Transconductance -1.0 -1.9 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -15 V, VGS = 0 V, f = 1 MHz 1540 2050 pF 290 390 pF 260 385 pF Ω 5 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time VDD = -15 V, ID = -9.0 A, VGS = -10 V, RGEN = 6 Ω 9 17 ns 10 18 ns 35 56 ns 19 33 ns nC td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to -10 V 34 47 Qg Total Gate Charge 18 25 Qgs Gate to Source Charge VGS = 0 V to -4.5 V VDD = -15 V, ID = -9.0 A Qgd Gate to Drain “Miller” Charge nC 5 nC 9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.9 A (Note 2) 0.75 1.2 VGS = 0 V, IS = -9.0 A (Note 2) 0.86 1.5 IF = -9.0 A, di/dt = 100 A/μs V 25 39 ns 12 21 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 125 °C/W when mounted on a minimum pad of 2 oz copper. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 18 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = -6 A, VDD = -27 V, VGS = -10 V. 100% tested at L = 0.3 mH, IAS = -8 A. 4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 2 www.fairchildsemi.com FDMS4435BZ P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4.0 -ID, DRAIN CURRENT (A) VGS = -10 V VGS = -6 V 40 VGS = -4.5 V VGS = -4 V 30 20 VGS = -3.5 V 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 VGS = -3.5 V VGS = -4 V 3.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 3.0 2.0 VGS = -6 V 1.5 1.0 VGS = -10 V 0.5 4 0 10 20 30 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 80 ID = - 9 A VGS = -10 V ID = -9 A 40 TJ = 125 oC 20 TJ = 25 oC 0 -50 50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 50 -IS, REVERSE DRAIN CURRENT (A) 40 VDS = -5 V 30 TJ = 125 oC 20 TJ = 25 oC 10 TJ = -55 oC 2 2 -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 1 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) 40 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 0 VGS = -4.5 V 2.5 3 4 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMS4435BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE (V) 10 5000 ID = -9 A 8 Ciss CAPACITANCE (pF) VDD = -10 V 6 VDD = -15 V 4 VDD = -20 V 1000 Coss 2 0 0 8 16 24 32 100 0.1 40 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 20 40 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC 32 VGS = -10 V 24 16 VGS = -4.5 V Package Limited 8 o RθJC = 3.2 C/W 1 0.01 0.1 1 0 25 10 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Cate Temperature -1 10 100 -2 VGS = 0 V 10 100 μ s -3 10 -ID, DRAIN CURRENT (A) -Ig, GATE LEAKAGE CURRENT (A) Crss f = 1 MHz VGS = 0 V -4 10 -5 10 TJ = 125 oC -6 10 -7 TJ = 25 10 oC -8 10 -9 10 0 3 6 9 12 15 18 21 24 27 30 33 1 0.1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED Rθ JA = 125 oC/W TA = 25 oC 10 s DC 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 1 ms 0.01 0.05 0.1 -10 10 10 Figure 12. Forward Bias Safe Operating Area 4 www.fairchildsemi.com FDMS4435BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted P(PK), PEAK TRANSIENT POWER (W) 1000 100 10 SINGLE PULSE o RθJA = 125 C/W o 1 TA = 25 C 0.5 -4 10 -3 10 -2 -1 10 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 13. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 5 www.fairchildsemi.com FDMS4435BZ P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS4435BZ P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 6 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I51 ©2011 Fairchild Semiconductor Corporation FDMS4435BZ Rev.C3 7 www.fairchildsemi.com FDMS4435BZ P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ PowerTrench® The Power Franchise® F-PFS™ Auto-SPM™ PowerXS™ The Right Technology for Your Success™ FRFET® ® Build it Now™ Global Power ResourceSM Programmable Active Droop™ ® CorePLUS™ Green FPS™ QFET Green FPS™ e-Series™ CorePOWER™ QS™ TinyBoost™ Gmax™ CROSSVOLT™ Quiet Series™ TinyBuck™ GTO™ CTL™ RapidConfigure™ TinyCalc™ IntelliMAX™ Current Transfer Logic™ ™ TinyLogic® ISOPLANAR™ DEUXPEED® TINYOPTO™ Dual Cool™ Saving our world, 1mW/W/kW at a time™ MegaBuck™ TinyPower™ EcoSPARK® SignalWise™ MICROCOUPLER™ TinyPWM™ EfficentMax™ SmartMax™ MicroFET™ TinyWire™ ESBC™ SMART START™ MicroPak™ TriFault Detect™ SPM® MicroPak2™ ® TRUECURRENT™* STEALTH™ MillerDrive™ μSerDes™ SuperFET® MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-8 OPTOLOGIC® FACT® ® Ultra FRFET™ OPTOPLANAR SupreMOS® FAST® ® UniFET™ SyncFET™ FastvCore™ VCX™ Sync-Lock™ FETBench™ VisualMax™ ®* FlashWriter® * PDP SPM™ XS™ FPS™ Power-SPM™