MJD47 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICALLY SIMILAR TO TIP47 APPLICATIONS ■ SWITCH MODE POWER SUPPLIES ■ AUDIO AMPLIFIERS ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER 3 1 DPAK TO-252 (Suffix ”T4”) DESCRIPTION The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology, resulting in a rugged high performance cost-effective transistor. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CBO Collector-Base Voltage (IE = 0) 350 V V CEO Collector-Emitter Voltage (I B = 0) 250 V V EBO Emitt er-Base Voltage (I C = 0) 5 V Collector Current 1 A Collector Peak Current (tp < 5 ms) 2 A IC I CM IB Base Current 0.6 A I BM Base Peak Current (t p < 5 ms) 1.2 A P t ot Total Dissipation at T c = 25 o C T stg St orage Temperature Tj Max. Operating Junction T emperature January 2000 15 W -65 to 150 o C 150 o C 1/6 MJD47 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 8.33 100 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CES Collector Cut-off Current (V BE = 0) Parameter V CE = 350 V 0.1 mA I CEO Collector Cut-off Current (IB = 0) V CE = 150 V 0.1 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) Test Cond ition s I C = 30 mA Min. 250 V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 1 A IB = 0.2 A V BE(on) ∗ Base-Emitter O n Voltage IC = 1 A V CE = 10 V h FE∗ DC Current G ain I C = 0.3 A IC = 1 A VCE = 10 V V CE = 10 V fT Transition Frequency I C = 0.2 A VCE = 10 V f = 2MHz 10 hf e Small Signal Current Gain I C = 0.2 A VCE = 10 V f = 1KHz 25 30 10 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/6 Typ . Derating Curves V 1 V 1.5 V 150 MHz MJD47 DC Current Gain DC Current Gain Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Capacitance 3/6 MJD47 Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load Switching Time Inductive Load 4/6 MJD47 TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 0.8 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 5/6 MJD47 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2000 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6