ETC BUXD87-1

BUXD87

HIGH VOLTAGE NPN POWER TRANSISTOR
■
■
■
■
■
REVERSE PINS OUT Vs STANDARD
IPAK/DPAK PACKAGE
HIGH VOLTAGE CAPABILITY
HIGH DC CURRENT GAIN
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS:
■
SWITCH MODE POWER SUPPLIES
■
GENERAL PURPOSE SWITCHING
DESCRIPTION
The BUXD87 is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CEV
Collector-Emitter Voltage (V BE = -1.5V)
V CEO
Collector-Emitter Voltage (IB = 0)
V EBO
Emitter-Base Voltage (IC = 0)
IC
I CM
IB
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
I BM
Base Peak Current (tp < 5 ms)
P t ot
Total Dissipation at Tc = 25 C
T stg
St orage Temperature
Tj
April 1999
o
Max. Operating Junction Temperature
Value
Unit
1000
V
450
V
5
V
0.5
A
1
A
0.3
A
0.6
A
20
W
-65 to 150
o
C
150
o
C
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BUXD87
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
6.25
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CEV
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
100
1
µA
mA
1
mA
Collector Cut-off
Current (V BE = -1.5V)
V CE = 1000 V
V CE = 1000 V
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
V CEO(sus)
Collector-Emitter
Sustaining Voltage
I C = 100 mA
V BEO
Collector-Base
Sustaining Voltage
I C = 10 mA
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 0.1 A
I C = 0.2 A
IB = 0.01 A
IB = 0.02 A
0.8
1
V
V
V BE(s at)∗
Base-Emitt er
Saturation Voltage
I C = 0.2 A
IB = 0.02 A
1
V
DC Current Gain
I C = 50 mA
I C = 40 mA
VCE = 5 V
VCE = 5 V
VCE = 10 V f=1MHz
I EBO
h F E∗
fT
Transition Frequency
I C = 50 mA
ts
tf
RESISTIVE LO AD
Storage Time
Fall Time
V CC = 250 V
I B1 = 40 mA
t p = 20 µs
T j = 125 oC
IC = 200 mA
I B2 = -80 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/6
Derating Curves
450
V
5
V
50
12
20
MHz
4.5
0.5
µs
µs
BUXD87
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Reverse Biased SOA
3/6
BUXD87
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A3
0.70
1.30
0.028
0.051
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
B3
0.85
B5
B6
C
0.033
0.30
0.012
0.95
0.037
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.237
0.244
E
6.40
6.60
0.252
0.260
0.181
G
4.40
4.60
0.173
H
15.90
16.30
0.626
0.642
L
9.00
9.40
0.354
0.370
L1
0.80
1.20
0.031
L2
0.80
V1
10o
1.00
0.047
0.031
0.039
10o
P032N_E
4/6
BUXD87
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
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BUXD87
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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