2N5884 2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value PNP 2N5884 NPN 2N5886 Unit V CBO Collector-Base Voltage (I E = 0) 80 V V CEO Collector-Emitter Voltage (I B = 0) 80 V V EBO Emitter-Base Voltage (I C = 0) 5 V 25 A Collector Peak Current 50 A Base Current 7.5 A P tot Total Dissipation at T c ≤ 25 o C 200 W T stg Storage Temperature IC I CM IB Tj Collector Current Max. Operating Junction Temperature -65 to 200 o C 200 o C For PNP types voltage and current values are negative. June 1997 1/4 2N5884 / 2N5886 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.875 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Test Conditions Min. Typ. Max. Unit 1 10 mA mA Collector Cut-off Current (V BE = -1.5V) V CE = rated V CEO V CE = rated V CEO I CBO Collector Cut-off Current (I E = 0) V CE = rated V CBO 1 mA I CEO Collector Cut-off Current (I B = 0) V CE = 40 V 2 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage o T c = 150 C I C = 200 mA 80 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 15 A I C = 25 A I B = 1.5 A I B = 6.25 A 1 4 V V V BE(sat) ∗ Base-Emitter Saturation Voltage I C = 25 A I B = 6.25 A 2.5 V V BE ∗ Base-Emitter Voltage I C = 10 A V CE = 4 V 1.5 V h FE ∗ DC Current Gain IC = 3 A I C = 10 A I C = 25 A V CE = 4 V V CE = 4 V V CE = 4 V hfe Small Signal Current Gain IC = 3 A V CE = 4 V fT Transition frequency IC = 1 A V CE = 10 V Collector Base Capacitance IE = 0 V CB = 10 V for NPN type for PNP type tr Rise Time ts Storage Time I C = 10 A VCC = 30 V I B1 = -IB2 = 1A tf Fall Time C CBO ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 35 20 4 f = 1KHz 20 f =1 MHz 4 100 MHz f = 1MHz 500 1000 pF pF 0.7 µs 1 µs 0.8 µs 2N5884 / 2N5886 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 2N5884 / 2N5886 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4