2N5038 HIGH CURRENT NPN SILICON TRANSISTOR ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching applications. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CBO Collector-Base Voltage (I E = 0) Value Unit 150 V V CEX Collector-Emitter Voltage (V BE =-1.5V R BE =100Ω) 150 V V CER Collector-Emitter Voltage (R BE < 50Ω) 110 V V CEO Collector-Emitter Voltage (I B = 0) 90 V V EBO Emitter-Base Voltage (I C = 0) 7 V Collector Current 20 A Collector Peak Current 30 A 5 A IC I CM IB Base Current P tot Total Dissipation at T c ≤ 25 C T stg Storage Temperature Tj June 1997 o Max. Operating Junction Temperature 140 W -65 to 200 o C 200 o C 1/4 2N5038 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 1.25 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Test Conditions Min. Typ. Max. Unit 50 10 mA mA Collector Cut-off Current (V BE = -1.5V) V CE = 140 V V CE = 100 V I CEO Collector Cut-off Current (I B = 0) V CE = 70 V 20 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 7 V V EB = 5 V 50 5 mA mA V CEO(sus) ∗ Collector-Emitter Sustaining Voltage I C = 0.2 A V CER(sus) ∗ Collector-Emitter Sustaining Voltage I C = 0.2 A V CEX(sus) ∗ Collector-Emitter Sustaining Voltage o T c = 150 C 90 V R BE = 50 Ω 110 V I C = 0.2 A R BE = 100 Ω V BE =-1.5V 150 V V CE(sat) ∗ Collector-Emitter Saturation Voltage I C = 12 A I C = 20 A I B = 1.2 A IB = 5 A 1 2.5 V V V BE(sat) ∗ Collector-Emitter Saturation Voltage I C = 20 A IB = 5 A 3.3 V V BE ∗ Base-Emitter Voltage I C = 12 A V CE = 5 V 1.8 V h FE ∗ DC Current Gain IC = 2 A I C = 12 A V CE = 5 V V CE = 5 V Small Signal Current Gain IC = 2 A V CE = 10 V f = 5 MHz Collector-Base Capacitance IE = 0 V CB = 10 V f = 1 MHz tr Rise Time I C = 12 A VCC = 30 V I B1 = -IB2 = 1.2A ts tf hfe C CBO 250 100 12 300 pF 0.5 µs Storage Time 1.5 µs Fall Time 0.5 µs I s/b ∗∗ Second Breakdown Collector Current V CE = 28 V V CE = 45 V 5 0.9 A A E s/b Second Breakdown Energy V BE = -4 V R BE = 20 Ω L = 180µH 13 mJ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/4 50 20 2N5038 TO-3 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 11.00 13.10 0.433 0.516 B 0.97 1.15 0.038 0.045 C 1.50 1.65 0.059 0.065 D 8.32 8.92 0.327 0.351 E 19.00 20.00 0.748 0.787 G 10.70 11.10 0.421 0.437 N 16.50 17.20 0.649 0.677 P 25.00 26.00 0.984 1.023 R 4.00 4.09 0.157 0.161 U 38.50 39.30 1.515 1.547 V 30.00 30.30 1.187 1.193 A P C O N B V E G U D R P003F 3/4 2N5038 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4