SMP100MC ® TRISIL™ FOR TELECOM EQUIPMENT PROTECTION FEATURES ■ Bidirectional crowbar protection ■ Voltage: range from 120V to 270V ■ Low VBO / VR ratio ■ Micro capacitance from 20pF to 30pF @ 50V ■ Low leakage current : IR = 2µA max ■ Holding current: IH = 150 mA min ■ Repetitive peak pulse current : IPP = 100 A (10/1000µs) MAIN APPLICATIONS Any sensitive equipment requiring protection against lightning strikes and power crossing. These devices are dedicated to central office protection as they comply with the most stressfull standards. Their Micro Capacitance make them suitable for ADSL2+ and low end VDSL. DESCRIPTION The SMP100MC is a series of micro capacitance transient surge arrestors designed for the protection of high debit rate communication equipment. Its micro capacitance avoids any distortion of the signal and is compatible with digital transmission line cards (ADSL, VDSL, ISDN...). Compatible with Cooper Bussmann fuse: TCP 1.25A. SMB (JEDEC DO-214AA) Table 1: Order Codes Part Number SMP100MC-120 SMP100MC-140 SMP100MC-160 SMP100MC-200 SMP100MC-230 SMP100MC-270 Marking ML12 ML14 ML16 ML20 ML23 ML27 Figure 1: Schematic Diagram BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL60950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils comply with the following standards GR1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-5 and FCC part 68. December 2004 REV. 1 1/10 SMP100MC Table 2: In compliance with the following standards STANDARD Peak Surge Voltage (V) Waveform Voltage Required peak current (A) Current waveform Minimum serial resistor to meet standard (Ω) GR-1089 Core First level 2500 1000 2/10 µs 10/1000 µs 500 100 2/10 µs 10/1000 µs 0 0 GR-1089 Core Second level 5000 2/10 µs 500 2/10 µs 0 GR-1089 Core Intra-building 1500 2/10 µs 100 2/10 µs 0 ITU-T-K20/K21 6000 1500 10/700 µs 150 37.5 5/310 µs 0 0 ITU-T-K20 (IEC61000-4-2) 8000 15000 1/60 ns VDE0433 4000 2000 10/700 µs 100 50 5/310 µs 0 0 VDE0878 4000 2000 1.2/50 µs 100 50 1/20 µs 0 0 IEC61000-4-5 4000 4000 10/700 µs 1.2/50 µs 100 100 5/310 µs 8/20 µs 0 0 FCC Part 68, lightning surge type A 1500 800 10/160 µs 10/560 µs 200 100 10/160 µs 10/560 µs 0 0 FCC Part 68, lightning surge type B 1000 9/720 µs 25 5/320 µs 0 ESD contact discharge ESD air discharge 0 0 Table 3: Absolute Ratings (Tamb = 25°C) Symbol Parameter IPP Repetitive peak pulse current IFS Fail-safe mode : maximum current (note 1) ITSM I2t Tstg Tj TL Non repetitive surge peak on-state current (sinusoidal) I2t value for fusing Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. Note 1: in fail safe mode, the device acts as a short circuit 2/10 Value Unit 100 400 140 150 200 400 500 A 8/20 µs 5 kA t = 0.2 s t=1s t=2s t = 15 mn 18 9 7 4 A t = 16.6 ms t = 20 ms 20 21 A2s -55 to 150 150 °C 260 °C 10/1000 µs 8/20 µs 10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs SMP100MC Table 4: Thermal Resistances Symbol Parameter Rth(j-a) Junction to ambient (with recommended footprint) Rth(j-l) Junction to leads Value 100 20 Unit °C/W °C/W Table 5: Electrical Characteristics (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VR Continuous reverse voltage IR Leakage current at VR C Capacitance IRM @ VRM max. note1 µA V µA V SMP100MC-120* 108 120 SMP100MC-140* 126 140 SMP100MC-160 144 160 2 5 SMP100MC-200 180 200 SMP100MC-230 207 230 SMP100MC-270 243 270 Note 1: IR measured at VR guarantee VBR min ≥ VR Types Note 2: Note 3: Note 4: Note 5: Note 6: max. IR @ VR Dynamic VBO max. note 2 V 155 180 205 255 295 345 Static VBO @ IBO max. max. note 3 V mA 150 175 200 800 250 285 335 IH C C min. typ. typ. note 4 note 5 note 6 mA pF pF 30 60 30 60 25 50 150 20 45 20 40 20 40 see functional test circuit 1 see test circuit 2 see functional holding current test circuit 3 VR = 50V bias, VRMS=1V, F=1MHz VR = 2V bias, VRMS=1V, F=1MHz * in development 3/10 SMP100MC Figure 2: Pulse waveform Figure 3: Non repetitive surge peak on-state current versus overload duration ITSM(A) %IPP 70 Repetitive peak pulse current F=50Hz Tj initial = 25°C tr = rise time (µs) 60 tp = pulse duration time (µs) 100 50 40 50 30 20 0 tr 10 t tp t(s) 0 1.E-02 Figure 4: On-state voltage versus on-state current (typical values) 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 Figure 5: Relative variation of holding current versus junction temperature IT(A) IH[Tj] / IH[Tj=25°C] 2.2 100 2.0 Tj=25°C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 VT(V) 0.2 Tj(°C) 0.0 10 0 1 2 3 4 5 6 7 8 Figure 6: Relative variation of breakover voltage versus junction temperature -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Figure 7: Relative variation of leakage current versus junction temperature (typical values) IR[Tj] / IR[Tj=25°C] VBO[Tj] / VBO[Tj=25°C] 1.08 1.E+03 1.07 VR=243V 1.06 1.05 1.04 1.E+02 1.03 1.02 1.01 1.00 0.99 1.E+01 0.98 0.97 0.96 Tj(°C) 0.95 Tj(°C) 0.94 1.E+00 -40 -30 -20 -10 4/10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 25 50 75 100 125 SMP100MC Figure 8: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35µm, recommended pad layout) Figure 9: Relative variation of junction capacitance versus reverse voltage applied (typical values) Zth(j-a)/Rth(j-a) C [VR] / C [VR=2V] 1.0 1.2 0.9 1.1 F =1MHz VOSC = 1VRMS Tj = 25°C 1.0 0.8 0.9 0.7 0.8 0.6 0.7 0.5 0.6 0.4 0.5 0.4 0.3 0.3 0.2 0.2 0.1 0.0 1.E-02 VR(V) 0.1 tp(s) 0.0 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1 10 100 1000 APPLICATION NOTE In wireline applications, analog or digital, both central office and subscriber sides have to be protected. This function is assumed by a combined series / parallel protection stage. Line Ex. Analog line card Protection stage Line Protection stage Ring relay Ex. ADSL line card or terminal In such a stage, parallel function is assumed by one or several Trisil, and is used to protect against short duration surge (lightning). During this kind of surges the Trisil limits the voltage across the device to be protected at its break over value and then fires. The fuse assumes the series function, and is used to protect the module against long duration or very high current mains disturbances (50/60Hz). It acts by safe circuits opening. Lightning surge and mains disturbance surges are defined by standards like GR1089, FCC part 68, ITU-T K20. Fuse TCP 1.25A Tip L Tip S Fuse TCP 1.25A SMP100MC-xxx T1 SMP100MC-xxx Gnd Gnd SMP100MC-xxx T2 Fuse TCP 1.25A Ring L Typical circuit for subscriber side Ring S Typical circuit for central office side 5/10 SMP100MC Following figure shows the test method of the board having Fuse and Trisil. I surge Surge Generator Line side Following curve shows the turn on of the Trisil during lightning surge. Device to be protected Test board V Oscilloscope Current probe Voltage probe These topologies, using SMP100MC from ST and TCP1.25A from Cooper Bussmann, have been functionally validated with a Trisil glued on the PCB. Following example was performed with SMP100MC-270 Trisil. For more information, see Application Note AN2064. Test conditions: 2/10µs + and -2.5 and 5kV 500A (10 pulses of each polarity), Tamb = 25°C Test result: Fuse and Trisil OK after test in accordance with GR1089 requirements Following curve shows Trisil action while the fuse remains operational. In case of high current power cross test, the fuse acts like a switch by opening the circuit. Test conditions: 600V 3A 1.1s (first level), Tamb = 25°C Test result: Fuse and Trisil OK after test in accordance with GR1089 requirements Test conditions: 277V 25A (second level), Tamb = 25°C Test result: Fuse safety opened and Trisil OK after test in accordance with GR1089 requirements 6/10 SMP100MC Figure 10: Test circuit 1 for Dynamic IBO and VBO parameters 100 V / µs, di /dt < 10 A / µs, Ipp = 100 A 2Ω 83 Ω 45 Ω 10 µF U 66 Ω 46 µH 0.36 nF 470 Ω KeyTek 'System 2' generator with PN246I module 1 kV / µs, di /dt < 10 A / µs, Ipp = 10 A 250 Ω 26 µH 60 µF U 47 Ω 46 µH 12 Ω KeyTek 'System 2' generator with PN246I module Figure 11: Test circuit 2 for IBO and VBO parameters K ton = 20ms R1 = 140Ω R2 = 240Ω 220V 50Hz DUT Vout VBO measurement 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 20ms): ● for Bidirectional devices = Switch K is closed ● for Unidirectional devices = Switch K is open VOUT selection: ● Device with VBO < 200V ➔ VOUT = 250 VRMS, R1 = 140Ω ● Device with VBO ≤ 200V ➔ VOUT = 480 VRMS, R2 = 240Ω 7/10 SMP100MC Figure 12: Test circuit 3 for dynamic IH parameter R VBAT = - 48 V Surge generator D.U.T This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current ➔ IPP = 10A, 10/1000µs. 3/ The D.U.T. will come back off-state within 50ms maximum. Figure 13: Order Code SMP Trisil Surface Mount Repetitive Peak Pulse Current 100 = 100A Capacitance MC = Micro Capacitance Voltage 270 = 270V 8/10 100 MC - xxx SMP100MC Figure 14: SMB Package Mechanical data E1 REF. D A1 A2 b c E E1 D L E A1 A2 C L b DIMENSIONS Millimeters Inches Min. Max. Min. Max. 1.90 2.45 0.075 0.096 0.05 0.20 0.002 0.008 1.95 2.20 0.077 0.087 0.15 0.41 0.006 0.016 5.10 5.60 0.201 0.220 4.05 4.60 0.159 0.181 3.30 3.95 0.130 0.156 0.75 1.60 0.030 0.063 Figure 15: Foot Print Dimensions (in millimeters) 2.3 1.52 2.75 1.52 Table 5: Ordering Information Part Number Marking SMP100MC-120 ML12 SMP100MC-140 ML14 SMP100MC-160 ML16 SMP100MC-200 ML20 SMP100MC-230 ML23 SMP100MC-270 ML27 Package Weight Base qty Delivery mode SMB 0.11 g 2500 Tape & reel Table 6: Revision History Date Revision September-2003 0B 14-Dec-2004 1 Description of Changes First issue. Absolute ratings values, table 3 on page 2, updated. 9/10 SMP100MC Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners © 2004 STMicroelectronics - All rights reserved STMicroelectronics group of compagnies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10