ETC TP30

TP30-xxx Series
®
TRISILTM
FEATURES
n
n
n
n
n
BIDIRECTIONAL CROWBAR PROTECTION.
VOLTAGE RANGE: FROM 62 V TO 270 V.
HOLDING CURRENT :
IH = 150 mA min.
REPETITIVE PEAK PULSE CURRENT :
IPP = 30 A, 10/1000 µs.
JEDEC REGISTERED PACKAGE OUTLINE
DO-15
DESCRIPTION
The TP30-xxx series has been designed to protect
telecommunication equipment against lightning
surges and overvoltages induced by AC power
lines.
SCHEMATIC DIAGRAM
Peak Surge
Voltage
(V)
Voltage
Waveform
(µs)
Current
Waveform
(µs)
Admissible
Ipp
(A)
Necessary
Resistor
(Ω)
(CCITT) ITU-K20
1000
10/700
5/310
25
-
(CCITT) ITU-K17
1500
10/700
5/310
38
-
VDE0433
2000
10/700
5/310
40
10
VDE0878
2000
1.2/50
1/20
50
-
level 2
level 3
10/700
1.2/50
5/310
8/20
25
50
-
FCC Part 68, lightning surge
type A
1500
800
10/160
10/560
10/160
10/560
65
50
15.5
8.0
FCC Part 68, lightning surge
type B
1000
9/720
5/320
25
-
BELLCORE TR-NWT-001089
First level
2500
1000
2/10
10/1000
2/10
10/1000
125
30
15.0
23.3
BELLCORE TR-NWT-001089
Second level
5000
2/10
2/10
125
15.0
CNET l31-24
1000
0.5/700
0.8/310
25
-
COMPLIES WITH THE
FOLLOWING STANDARDS:
IEC-1000-4-5
February 2003 - Ed: 6B
1/6
TP30-xxx Series
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
P
Parameter
Power dissipation on infinite heatsink
Value
Unit
Tamb = 50 °C
3
W
IPP
Peak pulse current
10/1000 µs
8/20 µs
30
60
A
ITSM
Non repetitive surge peak on-state current
tp = 20 ms
15
A
tp = 20 ms
1
A2s
2
I t
dV/dt
2
I t value for fusing
Critical rate of rise of off-state voltage
VRM
Tstg
Tj
Storage temperature range
Maximum junction temperature
TL
Maximum lead temperature for soldering during 10s at 5mm for case
5
kV/µs
- 55 to + 150
150
°C
°C
230
°C
THERMAL RESISTANCES
Symbol
Rth (j-l)
Rth (j-a)
Parameter
Junction to leads
Junction to ambient on printed circuit
with standard footprint dimension
ELECTRICAL CHARACTERISTICS
(Tamb = 25°C)
Symbol
2/6
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
Continuous Reverse voltage
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
Value
Unit
60
°C/W
100
°C/W
TP30-xxx Series
Type
TP30-62
TP30-68
TP30-100
TP30-120
TP30-130
TP30-180
TP30-200
TP30-220
TP30-240
TP30-270
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
IRM @ VRM
max
IR @ VR
VBO @ IBO
max
note 2
max
note 1
IH
min
note 3
µA
V
A
V
V
mA
mA
2
2
2
2
2
2
2
2
2
2
56
61
90
108
117
162
180
198
216
243
50
50
50
50
50
50
50
50
50
50
62
68
100
120
130
180
200
220
240
270
82
90
133
160
173
240
267
293
320
360
800
800
800
800
800
800
800
800
800
800
150
150
150
150
150
150
150
150
150
150
C
typ
note 4
typ
note 5
pF
50
50
40
40
35
35
30
30
30
30
20
20
16
16
14
14
12
12
12
12
IR measured at VR guarantee VBRmin  VR
Measured at 50 Hz (1 cycle) - See test circuit 1.
See test circuit 2.
VR = 1V, F = 1MHz.
VR = 50V, F = 1MHz.
TEST CIRCUIT 1 FOR IBO and VBO parameters :
tp = 20ms
Auto
Transformer
220V/2A
R1
static
relay.
140
R2
240
K
220V
Vout
IBO
measure
D.U.T
V BO
measure
Transformer
220V/800V
5A
TEST PROCEDURE :
n Pulse Test duration (tp = 20ms):
- For Bidirectional devices = Switch K is closed
- For Unidirectional devices = Switch K is open.
n VOUT Selection
- Device with VBO < 250 Volt
- VOUT = 250 VRMS, R1 = 140 Ω.
- Device with VBO  250 Volt
- VOUT = 480 VRMS, R2 = 240 Ω.
3/6
TP30-xxx Series
TEST CIRCUIT 2 for IH parameter.
R
D.U.T.
- VP
VBAT = - 48 V
Surge generator
This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional
test circuit.
TEST PROCEDURE :
n 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T.
2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs.
3) The D.U.T will come back off-state within 50 ms max.
4/6
TP30-xxx Series
Fig. 1: Non repetitive surge peak on-sate current
versus overload duration (Tj initial = 25°C).
ITSM(A)
20
F = 50Hz
15
10
5
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Fig. 2: Relative variation of holding current versus
junction temperature.
IH[Tj] / IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
t(s)
Fig. 3: Relative variation of junction capacitance
versus reverse applied voltage (typical values).
40
Tj(°C)
60
80
100
120
Fig. 4: On-state voltage versus on-state current
(typical values).
IT(A)
C[VR]/C[VR=1V]
50
1.0
Tj = 25°C
F = 1MHz
20
0.5
10
5
0.2
2
0.1
1
10
100
300
1
0
1
2
3
4
VR(V)
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration.
5
VT(V)
6
7
8
9
10
Fig. 6: Relative variation of VBO voltage versus
junction temperature.
Vbo[Tj]/Vbo[Tj=25°C]
Zth(j-a)(°CW)
1.10
1E+2
1.05
1E+1
1.00
270 V
1E+0
0.95
1E-1
1E-3
1E-2
1E-1
1E+0
tp(s)
1E+1
1E+2 5E+2
62 V
0.90
-40
-20
0
20
40
Tj(°C)
60
80
100
5/6
TP30-xxx Series
ORDER CODE
TP 30 - 62
TRISIL PROTECTION
VOLTAGE
IPP = 30 A
MARKING : Logo, Date Code, Part Number.
PACKAGE MECHANICAL DATA
DO-15 (Plastic)
REF.
C
D
Millimeters
C
A
DIMENSIONS
Inches
Min.
Max.
Min.
Max.
A
6.05
6.75
0.238
0.266
B
2.95
3.53
0.116
0.139
C
26
31
1.024
1.220
D
0.71
0.88
0.028
0.035
B
Packaging : Tape and reel.
Weight : 0.4 g.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
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© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
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