TSIxxB1 ® Application Specific Discretes A.S.D.™ TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION ■ ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge : Telephone set Base station for cordless set Fax machine Modem Caller Id equipment Set top box DESCRIPTION The TSIxxB1 provides the diode bridge and the crowbar protection function that can be found in most of telecom terminal equipment. Integrated monolithically within a SO-8 package, this ASD™ device allows space saving on the board and greater reliability. SO-8 SCHEMATIC DIAGRAM FEATURES STAND-OFF VOLTAGE FROM 62V TO 265V PEAK PULSE CURRENT : 30 A (10/1000 µs) MAXIMUM DC CURRENT : IF = 0.2 A HOLDING CURRENT :150 mA 1 8 2 7 3 6 4 5 ■ ■ ■ ■ IN ACCORDANCE WITH THE FOLLOWING STANDARDS : µs µs µs µs µs µs 1.5 kV 38A 2 kV 40A(*) 1.5 kV 38A 10/1000 µs 10/1000 µs FCC Part 68 2/10 µs 2/10 µs MIL STD883C Method 3015-6 (*) with series resistor or PTC. 1 kV 30A(*) 2.5 kV 75A (*) CCITT K17 - K20 VDE 0433 CNET 10/700 5/310 10/700 5/310 0.5/700 0.2/310 Bellcore TR-NWT-000974: BENEFITS ■ ■ ■ ■ Diode bridge for polarity guard and crowbar protection within one device. Single chip for greater reliability Reduces component count versus discrete solution Saves space on the board TM: ASD is trademarks of STMicroelectronics. October 2003 - Ed: 4 1/9 TSIxxB1 TYPICAL APPLICATION PTC Telecom terminals have a diode bridge for polarity guard, located at the line interface stage. They also have above this diode bridge one crowbar protection device that is mandatory to prevent atmospheric effects and AC mains disturbances from damaging the electronic circuitry that follows the diode bridge. ST proposes a one chip device that includes both protection and diode bridge. This is the concept of the TSIxxB1 devices. Fig. 1 : The various uses of the TSIxxB1 in a conventional telecom network 2/9 TSIxxB1 ELECTRICAL PARAMETERS The VRM value corresponds to the maximum voltage of the application in normal operation. For instance, if the maximum line voltage is ranging between 100VRMS of ringing plus 48V of battery voltage, then the protection chosen for this application shall have a VRM close to 200V. The VBO is the triggering voltage. This indicates the voltage limit for which the component short-circuits. Passing this VBO makes the device turn on. TSIxxB1 BEHAVIOUR WITH REGARD TO SURGE STANDARD : The TSIxxB1 is able to replace both diode bridge and usual discrete protection on telecom terminals. Furthermore it complies with the CCITT K17 recommendations : 10/700 µs waveform surge test, 1.5kV AC power induction test AC power contact test The IBO is the current that makes the device turn on. Indeed, if we want a Trisil to be turned on not only the voltage across it shall pass the VBO value but the current through it shall also pass the IBO value. In other words, if a voltage surge occurring on the line is higher than the VBO value of a Trisil, whereas the line surge current is limited to a value that does not exceed the Trisil’s IBO value, then the Trisil will never turn into short circuit. At this time the surge will be clamped by the Trisil. Anyhow the electronic circuitry located after the Trisil will always be protected whatever the Trisil state is (crowbar or clamping mode). The IH stands for the holding current. When the Trisil is turned on, as soon as the crossing current surge gets lower than this IH value, the Trisil protection device turns back in its idle state. Remark : for this reason the Trisil ‘s IH value shall be chosen higher than what the maximum telecom line current can be. Fig. 2 : Test circuit for the CCITT K17 recommendations Ω 3/9 TSIxxB1 TEST # 1 LIGHTNING SIMULATION This test concerns the 10/700 µs waveform surge, ± 1.5 kV. The surge generator used for the test has the following circuitry (fig.2). Fig. 2 : 10/700 µs waveform surge generator circuit Ω Ω Ω The behaviour of the TSI200B1 to this lightning surge is given below (fig. 3). Fig. 3 : Voltage across the TSI200B1 at the + and - terminations and current throught it for a 1.5 kV positive surge (fig.3a) and negative surge (fig. 3b) These curves show the peak voltage the surge generates across the TSI200B1 + and terminations. This lasts a short time (′ 2 µs) and after, as the internal protection gehaves like a short circuit. The voltage drop across the TSIxxB1 becomes a few volts. In the meanwhile all the surge current flows in the protection. As far as the 10/700 µs waveform surge test is concerned,the TSIxxB1 withstand the ±1.5 kV test. 4/9 TSIxxB1 TEST # 2 AC POWER INDUCTION TEST This test simulates the induction phenomena that can happen between telecom lines and AC mains lines (fig. 4). Fig. 4 : AC power induction test circuit TEST #3 AC POWER CONTACT TEST This test simulates the direct contact between the telecom lines and the AC mains lines. The AC power contact test consists in applying 240VRMS through a 10Ω PTC during 15 minutes long on the device under test. The CCITT K17 recommendation specifies an internal generator impedance allowing 10 ARMS when in short circuit. The behavior of the TSI200B1 with respect to this surge is given in figure 6. Fig. 6 : Voltage at the TSI200B1 + & - terminations and the current through it. Part #1 test conditions : VRMS = 240 V R = 600 Ω t = 0.2 s test conditions : VRMS = 600 V R = 600 Ω t = 0.2 s Part #2 Fig. 5 : Voltage at the + and - terminations of the TSI200B1, and current through it while test part 1 is applied. The figure 6 shows that after 250ms there is no current anymore flowing through the TSI200B1 device. This is due to the action of the serial PTC that limits the current through the line. This PTC is mandatory for this test. It can also be replaced by a fuse or any other serial protection that “opens” the line loop under AC contact test. The TSIxxB1 withstand the AC power induction test in both cases. 5/9 TSIxxB1 ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol IPP IF Parameter Value Unit Non repetitive peak on-sate current (see note 1) 10/1000 µs (open circuit voltage wave shape 10/100 µs) 5/310 µs (open circuit voltage wave shape 10/700 µs) 2/10 µs (open circuit voltage wave shape 2/10 µs) 30 40 75 A Maximum DC current 0.2 A 5 3.5 A - 55 to +150 150 °C 260 °C ITSM Non repetitive surge peak on-state current Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10 s Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp = 20 ms t = 1s % I PP tp=1000µs tp=310µs tp=10µs 100 50 0 tr t tp THERMAL RESISTANCE Symbol Rth(j-a) Parameter Junction to ambient Value Unit 170 °C/W ELECTRICAL CHARACTERISTICS (Tamb=25°C) Symbol 6/9 Parameter I IPP VRM Stand-off voltage VBO Breakover voltage VBR Breakdown voltage IBO IH IH Holding current IRM IBO Breakover current IRM Leakage current at VRM IPP Peak pulse current C Capacitance αT Temperature coefficient V VRM VBO TSIxxB1 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C) 1 - PROTECTION DEVICES PARAMETERS IRM @ VRM Type µA V max. VBO @ IBO IH IBO C note1 note2 note1 note3 V mA mA mA pF max. min. min. max. typ. TSI62B1 1 5 50 62 90 150 50 400 200 TSI180B1 1 5 50 180 250 150 50 400 200 TSI200B1 1 5 50 200 290 150 50 400 200 TSI220B1 1 5 50 220 330 150 50 400 200 TSI265B1 1 5 50 265 380 150 50 400 200 Note 1 : Measured at 50 Hz, one cycle Note 2 : See test cricuit Note 3 : VR = 0V, F = 1MHz, between pins 1 and 8. 2 - DIODE BRIDGE PARAMETERS Symbol VF (for one diode) Test condition IF = 20 mA IF = 100 mA Value Unit 0.9 1.1 V V FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO - NO GO TEST R D.U.T. - VP VBAT = - 48 V Surge generator This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : ■ 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within a duration of 50 ms max. 7/9 TSIxxB1 MARKING Type Marking TSI180B1 TSI180 TSI200B1 TSI200 TSI220B1 TSI220 ORDER CODE TSI Terminal Set Interface 265 B 1 RL RL = Tape & reel (2500pcs) = Tube (100pcs) SO-8 Package VBRmin 8/9 TSIxxB1 PACKAGE MECHANICAL DATA SO-8 DIMENSIONS REF. Millimetres Min. Typ. Max. A a1 Inches 0.1 a2 Min. Typ. Max. 1.75 0.069 0.25 0.004 0.010 1.65 0.065 b 0.35 0.48 0.014 0.019 b1 0.19 0.25 0.007 0.010 C 0.50 c1 0.020 45° (typ) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.15 0.157 L 0.4 1.27 0.016 0.050 0.6 0.024 M S 8° (max) Packaging : product supplied in tape and reel or antistatic tubes. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2003 STMicroelectronics - All rights reserved. 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