STW80NF55-06 N-CHANNEL 55V - 0.005Ω - 80A TO-247 STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STW80NF55-06 ■ ■ ■ VDSS RDS(on) ID 55 V < 0.0065 Ω 80 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC-AC & DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Value Unit Drain-source Voltage (VGS = 0) Parameter 55 V Drain-gate Voltage (RGS = 20 kΩ) 55 V VGS Gate- source Voltage ±20 V ID (*) Drain Current (continuos) at TC = 25°C 80 A ID Drain Current (continuos) at TC = 100°C 80 A Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C Single Pulse Avalanche Energy 1 J – 55 to 175 °C IDM (●) PTOT EAS (1) Tstg Tj Storage Temperature Max. Operating Junction Temperature (●) Pulse width limited by safe operating area (1) Starting T j = 25°C, I D = 40A, VDD = 40V (*) Current Limited by wire bonding October 2001 1/6 STW80NF55-06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 55 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 40 A Min. Typ. Max. Unit 2 3 4 V 0.005 0.0065 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/6 Parameter Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS > 15 V, ID = 40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 50 S 7300 pF 980 pF 250 pF STW80NF55-06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 27.5 V, ID = 40A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 44 V, ID = 80 A, VGS = 10 V Typ. Max. Unit 40 ns 240 ns 190 40 65 230 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions td(off) tf Turn-off-Delay Time Fall Time VDD = 27.5 V, ID = 40A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) td(off) tr(Voff) tf tc Off-voltage Rise Time Off-voltage Rise Time Fall Time Cross-over Time Vclamp = 44 V, ID =80A RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Min. 260 75 ns ns 70 185 240 110 ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Test Conditions Min. Typ. Source-drain Current Source-drain Current (pulsed) Forward On Voltage ISD = 80A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see test circuit, Figure 5) Max. Unit 80 A 320 A 1.5 90 0.295 6.5 V ns µC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/6 STW80NF55-06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STW80NF55-06 TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.85 5.15 0.19 TYP. 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 MAX. F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13 G 10.90 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 5/6 STW80NF55-06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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