STB60NE03L-12 N-CHANNEL 30V - 0.009 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPE VDSS R DS(on) ID STB60NE03L-12 30 V <0.012 Ω 60 A TYPICAL RDS(on) = 0.009 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETETIVE AVALANCHE DATA AT 100 oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK TO-263 (suffix“T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ DC-DC & DC-AC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Drain-source Voltage (VGS = 0) 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V Gate- source Voltage ±20 V ID Drain Current (continuos) at TC = 25°C 60 A ID Drain Current (continuos) at TC = 100°C 42 A V DS V DGR VGS IDM(•) Ptot dv/dt (1) Tstg Tj Drain Current (pulsed) 240 A Total Dissipation at TC = 25°C Derating Factor 100 W 0.67 W/°C 7 V/ns –65 to 175 °C 175 °C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area (1)ISD [ 60 A, di/dt m300A/ms, VDD [ V(BR)DSS, Tj [ TJMA November 2000 This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice. 1/6 STB60NE03L-12 THERMAL DATA R thj-case R thj-amb Rthc-sink Tj Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.5 62.5 0.5 300 °C/W °C/W °C/W °C Max Value Unit Max Max Max AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 60 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 15 V) 150 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20 V V(BR)DSS VGS = 0 Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA ON (*) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA R DS(on) Static Drain-source On Resistance VGS = 10 V VGS = 5 V ID = 30 A I D = 30 A ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V Min. Typ. Max. Unit 1 1.7 2.5 V 0.009 0.012 0.018 Ω Ω 60 A DYNAMIC Symbol 2/6 Parameter Test Conditions gfs (*) Forward Transconductance VDS > ID(on) x R DS(on)max ID=30 A C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitances VDS = 25V f = 1 MHz VGS = 0 Min. Typ. 20 30 2200 570 200 Max. Unit S 2800 750 250 pF pF pF STB60NE03L-12 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 15 V ID = 30 A RG = 4.7 Ω VGS = 5 V (see test circuit, Figure 3) 40 260 50 320 ns ns Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 24 V ID= 60 A VGS=5 V 35 18 13 45 nC nC nC Typ. Max. Unit 35 120 175 50 160 230 ns ns ns Typ. Max. Unit 60 240 A A 1.5 V SWITCHING OFF Symbol td(off) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. Vclamp = 24 V ID = 60 A RG = 4.7 Ω VGS = 5 V (Inductive Load, see fig.5) SOURCE DRAIN DIODE Symbol Parameter ISD ISDM(•) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =60 A di/dt = 100 A/µs VDD = 24 V Tj = 150 °C (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. VGS = 0 55 0.1 3.5 ns µC A (*) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limit ed by safe operating area. . . 3/6 STB60NE03L-12 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/6 STB60NE03L-12 D2PAK MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.4 4.6 0.173 TYP. 0.181 MAX. A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 10.4 0.393 4.88 5.28 0.192 0.208 E1 G 0.368 0.315 8.5 0.334 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R V2 0.4 0º 0.015 8º 5/6 STB60NE03L-12 Information furnished is believed to be accurate and reliable. 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