STB30N10 N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR TYPE V DSS R DS(on) ID STB30N10 100 V < 0.07 Ω 30 A ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 20 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 30 A ID Drain Current (continuous) at T c = 100 o C 21 A 120 A IDM (•) P tot Drain Current (pulsed) o Total Dissipation at T c = 25 C Derating Factor T stg Tj Storage Temperature Max. Operating Junction Temperature 150 W 1 W/o C -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area September 1998 1/5 STB30N10 THERMAL DATA R thj-case R thj-amb R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink o 1 62.5 0.5 Max Max Typ C/W C/W o C/W o AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 25 V) Max Value Unit 30 A 240 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 100 o C IGSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 100 Unit V V GS = ± 20 V 10 10 µA µA ±100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10 V I D = 15 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.06 0.07 Ω 30 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max I D = 15 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ. 10 20 2600 350 85 Max. Unit S 3600 500 110 pF pF pF STB30N10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 50 V R G = 47 Ω Test Conditions I D = 15 A V GS = 10 V Min. 25 60 35 90 ns ns Turn-on Current Slope V DD = 80 V R G = 47 Ω I D = 30 A V GS = 10 V 480 Total Gate Charge Gate-Source Charge Gate-Drain Charge I D = 30 A V GS = 10 V V DD = 80 V A/µs 80 13 28 120 nC nC nC Typ. Max. Unit 25 25 55 35 35 75 ns ns ns Typ. Max. Unit 30 120 A A 1.5 V SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 80 V R G = 47 Ω Min. I D = 30 A V GS = 10 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 30 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 30 A V DD = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C 175 ns 1.05 µC 12 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STB30N10 TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.25 1.4 0.049 0.055 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.28 0.393 0.404 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 E A C2 L2 D L L3 B2 B A1 C G P011P6/C 4/5 STB30N10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. 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