STW80N06-10 ® N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS(on) ID STW80N06-10 60 V < 0.010 Ω 80 A ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 1 2 3 TO-247 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ POWER MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCRONOUS RECTIFICATION ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS Parameter Value Unit Drain-source Voltage (V GS = 0) 60 V Drain- gate Voltage (R GS = 20 kΩ) 60 V ± 20 V 80 A Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C ID o IDM (•) P tot dV/dt( 1 ) T stg Tj Drain Current (continuous) at T c = 100 C 60 A Drain Current (pulsed) 320 A Total Dissipation at T c = 25 o C 180 W Derating Factor 1.2 W/ o C 5 V/ns Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area October 1998 1/5 STW80N06-10 THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 0.83 62.5 0.5 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 60 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 25 V) 600 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 150 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 42 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IGSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 60 Unit V T c = 125 o C V GS = ± 20 V 10 100 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance I D(on) I D = 250 µA V GS = 10V I D = 40 A V GS = 10V I D = 40 A Min. Typ. Max. Unit 2 3 4 V 0.0085 0.01 0.02 Ω Ω T c = 100 o C On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V 80 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 40 A V GS = 0 Min. Typ. Max. Unit 25 S 5900 900 230 pF pF pF STW80N06-10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Typ. Max. Unit Turn-on Time Rise Time Parameter V DD = 30 V ID = 40 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Conditions 32 160 42 200 ns ns Turn-on Current Slope V DD = 48 V I D = 80 A R G = 50 Ω V GS = 10 V (see test circuit, figure 5) 240 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 40 V 230 30 60 280 nC nC nC Typ. Max. Unit 35 175 240 46 230 300 ns ns ns Typ. Max. Unit 80 320 A A 1.5 V 125 ns 0.6 µC 10 A I D = 80 A Min. V GS = 10 V A/µs SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 48 V I D = 40 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 80 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 80 A di/dt = 100 A/µs V DD = 30 V T j = 150 o C (see test circuit, figure 5) t rr Q rr I RRM V GS = 0 Min. (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 3/5 STW80N06-10 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/5 STW80N06-10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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