STP16N10L ® N - CHANNEL 100V - 0.14 Ω - 16A - TO-220 POWER MOS TRANSISTOR TYPE STP16N10L ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 100 V < 0.16 Ω 16 A TYPICAL RDS(on) = 0.14 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE HIGH dV/dt RUGGEDNESS APPLICATION ORIENTED CHARACTERIZATION 3 1 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ POWER MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS ■ SYNCRONOUS RECTIFICATION 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 100 V Drain- gate Voltage (R GS = 20 kΩ) 100 V ± 15 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 16 A ID Drain Current (continuous) at T c = 100 o C 11 A Drain Current (pulsed) 64 A Total Dissipation at T c = 25 C 90 W Derating Factor 0.4 W/ o C Peak Diode Recovery voltage slope 0.6 V/ns IDM (•) P tot dV/dt( 1 ) T stg Tj March 1999 o Storage Temperature Max. Operating Junction Temperature -65 to 175 o C 175 o C 1/5 STP16N10L THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose o 1.67 62.5 0.5 300 Max Max Typ C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) 16 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) 150 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA V GS = 0 I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (V DS = 0) Min. Typ. Max. 100 Unit V T c = 125 o C V GS = ± 15 V 1 10 µA µA ± 100 nA Max. Unit ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance I D(on) I D = 250 µA Min. 1 V GS = 5V I D = 8 A V GS = 10V I D = 8 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Typ. 1.7 2.5 V 0.14 0.12 0.16 0.14 Ω Ω 16 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 8 A V GS = 0 Min. Typ. 6.5 10 800 150 50 Max. Unit S 1100 200 70 pF pF pF STP16N10L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 50 V R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 80 V I D = 16 A Typ. Max. Unit ID = 8 A V GS = 5 V Min. 15 40 20 55 ns ns V GS = 5 V 20 6 10 30 nC nC nC Typ. Max. Unit 12 12 25 18 18 35 ns ns ns Typ. Max. Unit 16 64 A A 1.5 V SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 80 V R G = 4.7 Ω Min. I D = 16 A V GS = 5 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 16 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 16 A V DD = 30 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C 145 ns 580 µC 8 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STP16N10L TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/5 L4 P011C STP16N10L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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