STMICROELECTRONICS STP16N10L

STP16N10L
®
N - CHANNEL 100V - 0.14 Ω - 16A - TO-220
POWER MOS TRANSISTOR
TYPE
STP16N10L
■
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
100 V
< 0.16 Ω
16 A
TYPICAL RDS(on) = 0.14 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
HIGH CURRENT CAPABILITY
175oC OPERATING TEMPERATURE
HIGH dV/dt RUGGEDNESS
APPLICATION ORIENTED
CHARACTERIZATION
3
1
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ POWER MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCRONOUS RECTIFICATION
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
V DGR
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
100
V
Drain- gate Voltage (R GS = 20 kΩ)
100
V
± 15
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
16
A
ID
Drain Current (continuous) at T c = 100 o C
11
A
Drain Current (pulsed)
64
A
Total Dissipation at T c = 25 C
90
W
Derating Factor
0.4
W/ o C
Peak Diode Recovery voltage slope
0.6
V/ns
IDM (•)
P tot
dV/dt( 1 )
T stg
Tj
March 1999
o
Storage Temperature
Max. Operating Junction Temperature
-65 to 175
o
C
175
o
C
1/5
STP16N10L
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
o
1.67
62.5
0.5
300
Max
Max
Typ
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
16
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
150
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
V GS = 0
I DSS
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
100
Unit
V
T c = 125 o C
V GS = ± 15 V
1
10
µA
µA
± 100
nA
Max.
Unit
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold Voltage V DS = V GS
R DS(on)
Static Drain-source On
Resistance
I D(on)
I D = 250 µA
Min.
1
V GS = 5V I D = 8 A
V GS = 10V I D = 8 A
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Typ.
1.7
2.5
V
0.14
0.12
0.16
0.14
Ω
Ω
16
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 8 A
V GS = 0
Min.
Typ.
6.5
10
800
150
50
Max.
Unit
S
1100
200
70
pF
pF
pF
STP16N10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
t d(on)
tr
Turn-on Time
Rise Time
V DD = 50 V
R G = 4.7 Ω
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 80 V
I D = 16 A
Typ.
Max.
Unit
ID = 8 A
V GS = 5 V
Min.
15
40
20
55
ns
ns
V GS = 5 V
20
6
10
30
nC
nC
nC
Typ.
Max.
Unit
12
12
25
18
18
35
ns
ns
ns
Typ.
Max.
Unit
16
64
A
A
1.5
V
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 80 V
R G = 4.7 Ω
Min.
I D = 16 A
V GS = 5 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 16 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 16 A
V DD = 30 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
145
ns
580
µC
8
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STP16N10L
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
14.0
0.511
L2
16.4
L4
0.645
13.0
0.551
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L5
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
4/5
L4
P011C
STP16N10L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
5/5