STMICROELECTRONICS W16NA40

STW16NA40
STH16NA40FI
®
N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
V DSS
R DS(on)
ID
STW16NA40
STH16NA40FI
400 V
400V
< 0.3 Ω
< 0.3 Ω
16 A
10 A
■
■
■
■
■
TYPICAL RDS(on) = 0.21 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
APPLICATION ORIENTED
CHARACTERIZATION
3
3
2
2
1
1
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
TO-247
ISOWATT218
■
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STW16NA40
VDS
V DGR
V GS
400
V
Gate-source Voltage
± 30
V
16
ID
o
Drain Current (continuous) at T c = 100 C
Drain Current (pulsed)
V ISO
T stg
Tj
V
Drain- gate Voltage (R GS = 20 kΩ)
Drain Current (continuous) at T c = 25 o C
P tot
STH16NA40FI
400
Drain-source Voltage (V GS = 0)
ID
IDM (•)
Unit
10
A
10
7
A
64
64
A
Total Dissipation at T c = 25 C
180
70
W
Derating Factor
1.44
0.56
W/ o C

4000
o
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
V
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
October 1998
1/6
STW16NA40-STH16NA40FI
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
TO-247
ISOWATT218
0.69
1.78
30
0.1
300
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
C/W
o
C/W
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
16
A
435
mJ
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
23
mJ
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
10
A
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
E AR
IAR
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
IGSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Typ.
Max.
400
V GS = 0
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
Gate-body Leakage
Current (V DS = 0)
Min.
Unit
V
T c = 100 o C
V GS = ± 30 V
25
250
µA
µA
±100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold
Voltage
V DS = V GS
R DS(on)
Static Drain-source On
Resistance
V GS = 10V I D = 8 A
V GS = 10V ID = 8 A
On State Drain Current
V DS > I D(on) x R DS(on)max
V GS = 10 V
I D(on)
I D = 250 µA
Min.
Typ.
Max.
Unit
2.25
3
3.75
V
0.21
0.3
0.6
Ω
Ω
T c = 100 o C
16
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/6
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V DS > I D(on) x R DS(on)max
V DS = 25 V
f = 1 MHz
ID = 8 A
V GS = 0
Min.
Typ.
9
12
2600
390
120
Max.
Unit
S
3500
540
160
pF
pF
pF
®
STW16NA40-STH16NA40FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
Parameter
V DD = 200 V
R G = 4.7 Ω
Turn-on Current Slope
V DD = 320 V
R G = 47 Ω
(di/dt) on
Qg
Q gs
Q gd
Test Conditions
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 320 V
Min.
ID = 8 A
V GS = 10 V
I D = 16 A
V GS = 10 V
ID = 16 A
V GS = 10 V
Typ.
Max.
Unit
20
18
25
24
ns
ns
380
A/µs
145
15
50
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 320 V
R G = 4.7 Ω
Min.
I D = 16 A
V GS = 10 V
Typ.
Max.
Unit
25
20
45
35
25
60
ns
ns
ns
Typ.
Max.
Unit
16
64
A
A
1.6
V
SOURCE DRAIN DIODE
Symbol
Parameter
ISD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
t rr
Q rr
I RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
I SD = 16 A
I SD = 16 A
V DD = 100 V
Min.
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
550
ns
9.6
µC
35
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
®
3/6
STW16NA40-STH16NA40FI
TO-247 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.413
L4
34.6
1.362
L5
5.5
0.217
0.582
M
2
3
0.079
0.118
Dia
3.55
3.65
0.140
0.144
P025P
4/6
®
STW16NA40-STH16NA40FI
ISOWATT218 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
5.35
5.65
0.210
0.222
C
3.3
3.8
0.130
0.149
D
2.9
3.1
0.114
0.122
D1
1.88
2.08
0.074
0.081
E
0.75
1
0.029
0.039
F
1.05
1.25
0.041
0.049
G
10.8
11.2
0.425
0.441
H
15.8
16.2
0.622
0.637
L1
20.8
21.2
0.818
0.834
L2
19.1
19.9
0.752
0.783
L3
22.8
23.6
0.897
0.929
L4
40.5
42.5
1.594
1.673
L5
4.85
5.25
0.190
0.206
L6
20.25
20.75
0.797
0.817
M
3.5
3.7
0.137
0.145
N
2.1
2.3
0.082
0.090
U
4.6
0.181
L3
C
D1
D
A
E
N
L2
L6
F
L5
H
G
U
M
1 2 3
L1
L4
P025C
®
5/6
STW16NA40-STH16NA40FI
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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®