STW16NA40 STH16NA40FI ® N - CHANNEL 400V - 0.21Ω - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS(on) ID STW16NA40 STH16NA40FI 400 V 400V < 0.3 Ω < 0.3 Ω 16 A 10 A ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 3 2 2 1 1 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT TO-247 ISOWATT218 ■ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STW16NA40 VDS V DGR V GS 400 V Gate-source Voltage ± 30 V 16 ID o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) V ISO T stg Tj V Drain- gate Voltage (R GS = 20 kΩ) Drain Current (continuous) at T c = 25 o C P tot STH16NA40FI 400 Drain-source Voltage (V GS = 0) ID IDM (•) Unit 10 A 10 7 A 64 64 A Total Dissipation at T c = 25 C 180 70 W Derating Factor 1.44 0.56 W/ o C 4000 o Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area October 1998 1/6 STW16NA40-STH16NA40FI THERMAL DATA R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max TO-247 ISOWATT218 0.69 1.78 30 0.1 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit 16 A 435 mJ Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 23 mJ Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 10 A IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) E AR IAR ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Typ. Max. 400 V GS = 0 Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) Min. Unit V T c = 100 o C V GS = ± 30 V 25 250 µA µA ±100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance V GS = 10V I D = 8 A V GS = 10V ID = 8 A On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V I D(on) I D = 250 µA Min. Typ. Max. Unit 2.25 3 3.75 V 0.21 0.3 0.6 Ω Ω T c = 100 o C 16 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/6 Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz ID = 8 A V GS = 0 Min. Typ. 9 12 2600 390 120 Max. Unit S 3500 540 160 pF pF pF ® STW16NA40-STH16NA40FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol t d(on) tr Parameter V DD = 200 V R G = 4.7 Ω Turn-on Current Slope V DD = 320 V R G = 47 Ω (di/dt) on Qg Q gs Q gd Test Conditions Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 320 V Min. ID = 8 A V GS = 10 V I D = 16 A V GS = 10 V ID = 16 A V GS = 10 V Typ. Max. Unit 20 18 25 24 ns ns 380 A/µs 145 15 50 nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 320 V R G = 4.7 Ω Min. I D = 16 A V GS = 10 V Typ. Max. Unit 25 20 45 35 25 60 ns ns ns Typ. Max. Unit 16 64 A A 1.6 V SOURCE DRAIN DIODE Symbol Parameter ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Test Conditions I SD = 16 A I SD = 16 A V DD = 100 V Min. V GS = 0 di/dt = 100 A/µs T j = 150 o C 550 ns 9.6 µC 35 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area ® 3/6 STW16NA40-STH16NA40FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/6 ® STW16NA40-STH16NA40FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C ® 5/6 STW16NA40-STH16NA40FI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. 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