STMICROELECTRONICS STU6NA100

STU6NA100
®
N - CHANNEL 1000V - 1.45Ω - 6A - Max220
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
STU6NA100
■
■
■
■
■
■
■
V DSS
R DS(on)
ID
1000 V
< 1.7 Ω
6A
TYPICAL RDS(on) = 1.45 Ω
± 30V GATE TO SOURCE VOLTAGE
RANTING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
3
2
1
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ CONSUMER AND INDUSTRIAL LIGHTING
■ DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
Max220
■
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
VDGR
V GS
Value
Unit
Drain-source Voltage (V GS = 0)
Parameter
1000
V
Drain- gate Voltage (R GS = 20 kΩ)
1000
V
± 30
V
Gate-source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
6
A
ID
Drain Current (continuous) at T c = 100 o C
3.9
A
Drain Current (pulsed)
24
A
Total Dissipation at T c = 25 C
160
W
Derating Factor
1.28
W/ o C
I DM (•)
P tot
T stg
Tj
o
Storage Temperature
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
June 1998
1/5
STU6NA100
THERMAL DATA
R thj-case
R thj-amb
R thc-sink
Tl
o
0.8
62
0.1
300
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
C/W
C/W
o
C/W
o
C
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max)
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, I D = I AR , VDD = 50 V)
Max Value
Unit
6
A
800
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V (BR)DSS
I DSS
I GSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating
Gate-body Leakage
Current (V DS = 0)
Min.
Typ.
Max.
1000
VGS = 0
Unit
V
o
T c = 100 C
V GS = ± 30 V
50
500
µA
µA
± 100
nA
ON (∗)
Symbol
Parameter
Test Conditions
V GS(th)
Gate Threshold
Voltage
V DS = VGS
ID = 250 µA
R DS(on)
Static Drain-source On
Resistance
V GS = 10 V
ID = 3 A
ID(on)
On State Drain Current V DS > I D(on) x R DS(on)max
V GS = 10 V
Min.
Typ.
Max.
Unit
2.25
3
3.75
V
1.45
1.7
Ω
6
A
DYNAMIC
Symbol
g fs (∗)
C iss
C oss
C rss
2/5
Parameter
Test Conditions
Forward
Transconductance
V DS > I D(on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 3 A
V GS = 0
Min.
Typ.
6
7
3170
270
76
Max.
Unit
S
4100
351
99
pF
pF
pF
STU6NA100
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
t d(on)
tr
Qg
Q gs
Q gd
Parameter
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V DD = 500 V
3.5 A
R G = 4.7 Ω
V DD = 800 V
Min.
ID =
Typ.
Max.
Unit
28
19
40
27
ns
ns
125
17
58
150
nC
nC
nC
Typ.
Max.
Unit
35
15
55
50
21
77
ns
ns
ns
Typ.
Max.
Unit
6
24
A
A
1.6
V
V GS = 10 V
ID = 7 A
V GS = 10 V
SWITCHING OFF
Symbol
t r(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V DD = 800 V
R G = 4.7 Ω
Min.
ID = 7 A
V GS = 10 V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I SD
I SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V SD (∗)
Forward On Voltage
I SD = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 6 A
V DD = 100 V
t rr
Q rr
I RRM
Min.
V GS = 0
di/dt = 100 A/µs
T j = 150 o C
835
ns
14
µC
33
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/5
STU6NA100
Max220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.2
2.4
0.087
0.094
A2
2.9
3.1
0.114
0.122
b
0.7
0.93
0.027
0.036
b1
1.25
1.4
0.049
0.055
b2
1.2
1.38
0.047
0.054
c
0.45
0.6
0.18
0.023
D
15.9
16.3
0.626
0.641
D1
9
9.35
0.354
0.368
D2
0.8
1.2
0.031
0.047
D3
2.8
3.2
0.110
0.126
e
2.44
2.64
0.096
0.104
E
10.05
10.35
0.396
0.407
L
13.2
13.6
0.520
0.535
L1
3
3.4
0.118
0.133
D1
D2
A1
A2
A
C
D3
b
b2
b1
D
e
E
L1
L
P011R
4/5
STU6NA100
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
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