STW8NB100 ® N - CHANNEL 1000V - 1.2Ω - 8A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE STW8NB100 ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 1000 V < 1.5 Ω 8A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS V DGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 1000 V Drain- gate Voltage (R GS = 20 kΩ) 1000 V ± 30 V Gate-source Voltage o ID Drain Current (continuous) at T c = 25 C 8 A ID Drain Current (continuous) at T c = 100 o C 5 A 32 A IDM (•) P tot dv/dt(1) T stg Tj Drain Current (pulsed) o Total Dissipation at T c = 25 C 190 W Derating Factor 1.52 W/ o C 4 V/ns Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area March 1999 -65 to 150 o C 150 o C (1) ISD ≤8 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/5 STW8NB100 THERMAL DATA R thj-case R thj-amb R thc-sink Tl o 0.66 30 0.1 300 Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose C/W C/W o C/W o C o AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Max Value Unit 8 A 600 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA Gate-body Leakage Current (V DS = 0) Typ. Max. 1000 V GS = 0 Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating o C Min. Unit V T c = 125 V GS = ± 30 V 1 50 µA µA ± 100 nA ON (∗) Symbol Parameter Test Conditions V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10 V ID = 4 A I D(on) On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V Min. Typ. Max. Unit 3 4 5 V 1.2 1.5 Ω 8 A DYNAMIC Symbol g fs (∗) C iss C oss C rss 2/5 Parameter Test Conditions Forward Transconductance V DS > I D(on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 4 A V GS = 0 Min. Typ. Max. Unit 8.9 S 2900 275 27 pF pF pF STW8NB100 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions t d(on) tr Turn-on Time Rise Time V DD = 500 V R G = 4.7 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 800 V I D = 7 A V GS = 10 V Min. Typ. Max. 32 13 I D = 3.5 A V GS = 10 V Unit ns ns 68 16 31 95 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 800 V R G = 4.7 Ω Min. ns ns ns 32 32 40 ID = 7 A V GS = 10 V SOURCE DRAIN DIODE Symbol ISD I SDM (•) V SD (∗) t rr Q rr I RRM Parameter Test Conditions Min. Typ. Source-drain Current Source-drain Current (pulsed) Forward On Voltage I SD = 8 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 8 A V DD = 100 V V GS = 0 di/dt = 100 A/µs T j = 150 o C Max. Unit 8 32 A A 1.6 V 1000 ns 11 µC 21 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STW8NB100 TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 4/5 STW8NB100 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 5/5